ASM3P2811A/B
ASM3P2812A/B
ASM3P2814A/B
April 2008
rev 1.6
Operating Conditions
Symbol
Parameter
Min
3.0
Max
3.6
+85
10
Unit
V
VDD
TA
Voltage on any pin with respect to GND
Operating temperature
Load Capacitance
-40
°C
CL
pF
pF
CIN
Input Capacitance
7
DC Electrical Characteristics
Symbol
Parameter
Min
Typ
Max
Unit
VIL
VIH
Input low voltage
VSS – 0.3
2
0.8
V
V
Input high voltage
Input low current
(Inputs D_C, SRS and FRS are pulled high internally)
VDD + 0.3
IIL
IIH
-50
50
3
µA
µA
Input high current
XOUT Output low current
(VXOL@ 0.4V, VDD = 3.3V)
XOUT Output high current
(VXOH@ 2.5V, VDD = 3.3V)
IXOL
mA
IXOH
3
mA
VOL
VOH
ICC
Output low voltage (VDD = 3.3V, IOL = 5mA)
Output high voltage (VDD = 3.3V, IOH = -5mA)
Dynamic supply current (Unloaded Output)
0.4
V
V
2.5
8
18
mA
Static supply current , Standby mode
(CLKIN pulled to GND)
IDD
4.5
mA
VDD
tON
Operating voltage
3.0
3.3
76
3.6
V
µS
Ω
Power up time (first locked clock cycle after power up)
Clock out impedance
500
ZOUT
AC Electrical Characteristics
Symbol
Parameter
Min
Typ
Max
Unit
fIN
Input frequency for ASM3P2811/12/13/14 A/B
Output frequency for ASM3P2811A/B
Output frequency for ASM3P2812A/B
Output frequency for ASM3P2814A/B
10
10
20
40
40
40
MHz
MHz
MHz
MHz
80
fOUT
160
tLH*
tHL*
tJC
Output rise time (measured at 0.8V to 2.0V)
Output fall time (measured at 2.0V to 0.8V)
Cycle to Cycle Jitter (Unloaded Output)
Output duty cycle
0.5
0.8
0.9
1.0
1.2
1.3
nS
nS
pS
%
±250
50
tD
45
55
* tLH and tHL are measured into a capacitive load of 10pF
Low Power EMI Reduction IC
4 of 11
Notice: The information in this document is subject to change without notice.
PULSECORE [ PulseCore Semiconductor ]
