November 2003
rev 1.0
ASM3P2531A
Absolute Maximum Ratings
Symbol
Parameter
Rating
-0.5 to +7.0
-65 to +125
0 to +70
Unit
V
VDD, VIN
TSTG
Voltage on any pin with respect to GND
Storage temperature
° C
° C
TA
Operating temperature
DC Electrical Characteristics
Symbol
Parameter
Min
GND - 0.3
2.0
Typ
Max
Unit
V
VIL
VIH
IIL
Input low voltage
Input high voltage
Input low current
Input high current
0.8
VDD + 0.3
-35
V
µA
µA
V
IIH
35
VDD = 3.3 V, IOL = 20 mA
DD = 5.0 V, IOL = 20 mA
VDD = 3.3 V, IOL = 20 mA
DD = 5.0 V, IOL = 20 mA
0.4
VOL
Output low voltage
Output high voltage
V
V
2.5
4.5
V
VOH
IDD
V
V
Static supply current standby mode
Normal mode
0.6
mA
fIN-min
3.2
fIN-typ
fIN-max
7.0
ICC
Dynamic supply current
3.3 V and 10 pF loading
5.0 V and 10 pF loading
mA
mA
V
6.2
13.6
5.5
VDD
tON
Operating voltage
2.7
3.3
0.18
50
Power-up time (first locked cycle after power up)
Clock output impedance
mS
Ω
ZOUT
AC Electrical Characteristics
Symbol
Parameter
Min
35
Typ
Max
55
Unit
MHz
MHz
ns
fIN
Input frequency
fOUT
Output frequency
35
55
Measured at 0.8 V to 2.0 V
Measured at 1.2 V to 3.75 V
Measured at 2.0 V to 0.8 V
Measured at 1.2 V to 3.75 V
0.7
0.9
0.75
0.8
1.1
1
tLH
Output rise time
Output fall time
ns
0.6
45
1.0
ns
1
tHL
0.75
ns
tJC
TD
Jitter (cycle to cycle)
Output duty cycle
360
55
ps
50
%
Low Frequency EMI Reduction
4 of 8
Notice: The information in this document is subject to change without notice.
PULSECORE [ PulseCore Semiconductor ]
