PSUT 115
Symbol Test Conditions
Characteristic Value
TVJ = TVJM, VR = VRRM, VD = VDRM
10
mA
≤
≤
ID, IR
IT = 150A, TVJ = TVJM
For power-loss calculations only (TVJ = TVJM
1.81
0.95
4.3
V
V
mΩ
VT
VTO
rT
)
VD = 6V
VD = 6V
TVJ = TVJM
TVJ = TVJM
TVJ = 25°C
TVJ = 25°C
VD = 0,5 VDRM
VD = 6 V
2.5
150
0.2
5
V
mA
V
≤
≤
≤
≤
VGT
IGT
VGD
IGD
mA
600
mA
TVJ = 25°C, tP = 10µs
≤
IL
IG = 0.6A, diG/dt = 0.6A/µs
200
1.2
mA
µs
TVJ = 25°C, VD = 6V, RA = 5Ω
TVJ = 25°C,
IG = 0.6A, diG/dt = 0.6A/µs
≤
≤
IH
tgd
190
TVJ = TVJM, IT = 50A, tP = 200µs, VR = 100V
-di/dt = 10A/µs, dv/dt = 20V/µs, VD = 2/3 VDRM
per thyristor; sine 180°el
per module; sine 180° el
per thyristor
per module
µs
tq
0.5
0.083
0.7
0.12
K/W
K/W
K/W
K/W
RthJC
RthJK
Creeping distance on surface
Max. allowable acceleration
12.5
50
mm
dS
a
m/s2
Temperture sensor
R25
P25
Rated resistance, Tc = 25 °C
5
kΩ
mW
R
100= 493Ω
Power dissipation, Tc = 25 °C
max. 20
Fig. Transient thermal impedance per arm vs. time
Fig. 2 Maximum allowable case temperature vs. RMS
current
POWERSEM GmbH, Walpersdorfer Str. 53
91126 D- Schwabach
2005 POWERSEM reserves the right to change limits, test conditions and dimensions
Phone: 09122 - 9764-0 Fax.: 09122 - 9764-201
POWERSEM [ POWERSEM GMBH ]
