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PSTG25HDT12 参数 Datasheet PDF下载

PSTG25HDT12图片预览
型号: PSTG25HDT12
PDF下载: 下载PDF文件 查看货源
内容描述: 电力线的N沟道沟槽栅-IGBT模块 [Powerline N-Channel Trench Gate-IGBT Module]
分类和应用: 双极性晶体管
文件页数/大小: 2 页 / 126 K
品牌: POWERSEM [ POWERSEM GMBH ]
 浏览型号PSTG25HDT12的Datasheet PDF文件第1页  
PSTG 25HDT12  
Symbol Test Conditions  
Characteristic Value  
typ.  
max.  
0.2  
1
VCE = VCES, VGE = 0 V, TVJ = 25°C  
mA  
mA  
ICES  
TVJ = 125°C  
500  
2.3  
nA  
V
V
VCE = 0 V, VGE = ±20 V  
IC = 25A, VGE = 15 V  
IGES  
TVJ = 25°C  
TVJ = 125°C  
1.9  
2.1  
7
170  
17  
340  
60  
2
VCE(sat)  
IC = 25A, VGE = VCE  
V
VGE(th)  
td(on)  
tr  
ns  
ns  
ns  
ns  
mJ  
mJ  
pF  
pF  
pF  
V
Inductive load, TVJ = 125°C  
VCE = 50% VCEs, IC = 25 A  
RG = 5 , VGE = ±15 V  
td(off)  
tf  
Eon  
Eoff  
3.5  
VCE = 75 V, VGE = 15 V, f= 1 MHz  
VCE = 75 V, VGE = 15 V, f= 1 MHz  
VCE = 75 V, VGE = 15 V, f= 1 MHz  
8000  
340  
50  
Cies  
Coes  
Cies  
VFM  
IF = 25 A,  
TVJ = 25°C  
TVJ = 125°C  
1.9  
1.92  
90  
V
ns  
A
IF = 25 A, diRR / dt = 200 A/µs,  
VR = 50% VRRM  
trr  
IRRM  
12  
NTC  
25°C  
470  
kΩ  
Package style and outline  
Dimensions in mm (1mm = 0.0394“)  
2005 POWERSEM reserves the right to change limits, test conditions and dimensions  
POWERSEM GmbH, Walpersdorfer Str. 53  
91126 D- Schwabach  
Phone: 09122 - 9764-0 Fax.: 09122 - 9764-20