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PSSI160/12 参数 Datasheet PDF下载

PSSI160/12图片预览
型号: PSSI160/12
PDF下载: 下载PDF文件 查看货源
内容描述: IGBT模块 [IGBT Module]
分类和应用: 双极性晶体管
文件页数/大小: 4 页 / 165 K
品牌: POWERSEM [ POWERSEM GMBH ]
 浏览型号PSSI160/12的Datasheet PDF文件第1页浏览型号PSSI160/12的Datasheet PDF文件第2页浏览型号PSSI160/12的Datasheet PDF文件第3页  
PSIG PSIS PSSI 160/12  
40  
mJ  
30  
120  
ns  
40  
mJ  
30  
800  
td(on)  
ns  
td(off)  
90  
600  
Eoff  
Eon  
Eon  
tr  
t
Eoff  
t
20  
10  
0
60  
30  
0
20  
10  
0
400  
VCE = 600V  
VCE = 600V  
VGE = ±15V  
V
GE = ±15V  
RG = 6.8  
TJ = 125°C  
RG = 6.8Ω  
TJ = 125°C  
200  
0
tf  
156T120  
156T120  
0
50  
100  
150  
IC  
200  
A
0
50  
100  
150  
IC  
200  
A
Fig. 7 Typ. turn on energy and switching  
times versus collector current  
Fig. 8 Typ. turn off energy and switching  
times versus collector current  
50  
mJ  
40  
300  
ns  
240  
25  
mJ  
20  
1500  
ns  
1200  
Eon  
td(off)  
VCE = 600V  
GE = ±15V  
IC = 100A  
TJ = 125°C  
VCE = 600V  
GE = ±15V  
IC = 100A  
TJ = 125°C  
V
V
td(on)  
Eoff  
Eoff  
Eon  
t
t
tr  
30  
20  
10  
0
180  
120  
60  
15  
10  
5
900  
600  
300  
0
tf  
156T120  
156T120  
0
0
0
8
16  
24  
32  
40  
RG  
48  
56  
0
8
16  
24  
32  
40  
48  
56  
RG  
Fig. 9 Typ. turn on energy and switching  
times versus gate resistor  
Fig.10 Typ. turn off energy and switching  
times versus gate resistor  
240  
A
200  
1
K/W  
0,1  
ICM  
ZthJC  
0,01  
160  
120  
80  
40  
0
diode  
IGBT  
RG = 6.8Ω  
TJ = 125°C  
V
CEK < VCES  
0,001  
0,0001  
single pulse  
156T120  
VDI...160-12P1  
0,00001  
V
0,00001 0,0001 0,001  
0,01  
0,1  
s
1
0
200 400 600 800 1000 1200  
VCE  
t
Fig. 11 Reverse biased safe operating area  
RBSOA  
Fig. 12 Typ. transient thermal impedance  
2002 POWERSEM reserves the right to change limits, test conditions and dimensions  
POWERSEM GmbH, Walpersdorfer Str. 53  
D - 91126 Schwabach  
Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20