PSIG PSIS PSSI 160/12
40
mJ
30
120
ns
40
mJ
30
800
td(on)
ns
td(off)
90
600
Eoff
Eon
Eon
tr
t
Eoff
t
20
10
0
60
30
0
20
10
0
400
VCE = 600V
VCE = 600V
VGE = ±15V
V
GE = ±15V
RG = 6.8Ω
TJ = 125°C
RG = 6.8Ω
TJ = 125°C
200
0
tf
156T120
156T120
0
50
100
150
IC
200
A
0
50
100
150
IC
200
A
Fig. 7 Typ. turn on energy and switching
times versus collector current
Fig. 8 Typ. turn off energy and switching
times versus collector current
50
mJ
40
300
ns
240
25
mJ
20
1500
ns
1200
Eon
td(off)
VCE = 600V
GE = ±15V
IC = 100A
TJ = 125°C
VCE = 600V
GE = ±15V
IC = 100A
TJ = 125°C
V
V
td(on)
Eoff
Eoff
Eon
t
t
tr
30
20
10
0
180
120
60
15
10
5
900
600
300
0
tf
156T120
156T120
0
0
Ω
Ω
0
8
16
24
32
40
RG
48
56
0
8
16
24
32
40
48
56
RG
Fig. 9 Typ. turn on energy and switching
times versus gate resistor
Fig.10 Typ. turn off energy and switching
times versus gate resistor
240
A
200
1
K/W
0,1
ICM
ZthJC
0,01
160
120
80
40
0
diode
IGBT
RG = 6.8Ω
TJ = 125°C
V
CEK < VCES
0,001
0,0001
single pulse
156T120
VDI...160-12P1
0,00001
V
0,00001 0,0001 0,001
0,01
0,1
s
1
0
200 400 600 800 1000 1200
VCE
t
Fig. 11 Reverse biased safe operating area
RBSOA
Fig. 12 Typ. transient thermal impedance
2002 POWERSEM reserves the right to change limits, test conditions and dimensions
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D - 91126 Schwabach
Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20
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