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PSMG150/01 参数 Datasheet PDF下载

PSMG150/01图片预览
型号: PSMG150/01
PDF下载: 下载PDF文件 查看货源
内容描述: 功率MOSFET [Power MOSFET]
分类和应用:
文件页数/大小: 4 页 / 141 K
品牌: POWERSEM [ POWERSEM GMBH ]
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PSMG 150/01  
Source-Drain Diode  
Package style and outline  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
Dimensions in mm (1mm = 0.0394“)  
Symbol  
TestConditions  
IS  
VGS = 0 V  
180  
720  
A
A
ISM  
Repetitive;  
pulse width limited by TJM  
VSD  
IF = 100A, VGS = 0 V, 1)  
1.5  
V
trr  
QRM  
IRM  
250  
ns  
µC  
A
IF = 50A,-di/dt = 100 A/µs, VR = 100 V  
1.1  
13  
Note: 1) Pulse width limited by TJM  
2)  
Pulse test, t 300 µs, duty cycle d 2 %  
Temperature Sensor NTC  
Symbol  
Conditions  
Characteristic Values  
min. typ. max.  
R25  
T = 25°C  
4.75  
5.0  
5.25 kΩ  
B25/50  
3375  
K
Module  
Symbol  
Conditions  
Maximum Ratings  
TVJ  
Tstg  
-40...+150  
-40...+125  
°C  
°C  
V~  
VISOL  
Md  
I
ISOL 1 mA; 50/60 Hz; t = 1 s  
3600  
Mounting torque (M4)  
1.5 - 2.0  
14 - 18  
50  
Nm  
lb.in.  
m/s2  
a
Max. allowable acceleration  
Symbol  
Conditions  
Characteristic Values  
min. typ. max.  
dS  
dA  
Creepage distance on surface (Pin to heatsink)  
Strike distance in air (Pin to heatsink)  
11.2  
11.2  
mm  
mm  
Weight  
24  
g
2003 POWERSEM reserves the right to change limits, test conditions and dimensions  
POWERSEM GmbH, Walpersdorfer Str. 53  
D - 91126 Schwabach  
Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20