Symbol
IRRM, IDRM
VT, VF
Test Conditions
Characteristic Values
TVJ = TVJM; VR = VRRM; VD = VDRM
IT, IF = 300 A; TVJ = 25°C
10 mA
1.25
0.88
V
V
V
For power-loss calculations only (TVJ = 125°C)
rTT0
1.15 mΩ
VGT
VD = 6 V;
VD = 6 V;
TVJ = 25°C
TVJ = -40°C
TVJ = 25°C
TVJ = -40°C
2.5
2.6
V
V
IGT
150 mA
200 mA
VGD
IGD
TVJ = TVJM
;
VD = 2/3 VDRM
0.2
V
10 mA
IL
T
= 25°C; t = 30 µs; VD = 6 V
300 mA
IGVJ= 0.5 A; diPG/dt = 0.5 A/µs
IH
TVJ = 25°C; VD = 6 V; RGK = ∞
200 mA
tgd
T
= 25°C; V = 1/2 V
2
µs
IGVJ= 0.5 A; diGD/dt = 0.5DARM/µs
Fig. 1 Gate trigger characteristics
tq
T = TVJM; IT = 300 A, t = 200 ms; -di/dt = 10 A/µs typ. 150
µs
VVRJ = 100 V; dv/dt = 20 PV/µs; VD = 2/3 VDRM
TVJ = TVJM; IT, IF = 300 A, -di/dt = 50 A/µs
QS
IRM
550
235
µC
A
RthJC
per thyristor/diode; DC current
0.155 K/W
0.0775 K/W
0.225 K/W
0.1125 K/W
per module
other values
RthJK
per thyristor/diode; DC current
per module
see Fig. 8/9
d
aA
Creepage distance on surface
Strike distance through air
12.7 mm
9.6 mm
50 m/s2
dS
Maximum allowable acceleration
Fig. 2 Gate trigger delay time
Dimensions in mm (1 mm = 0.0394")
PSKT Version 1
PSKH Version 1
2002 POWERSEM reserves the right to change limits, test conditions and dimensions
POWERSEM GmbH, Walpersdorfer Str. 53
D - 91126 Schwabach
Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20