10000
106
A2s
600
A
ITSM
I2t
VR = 0V
A
DC
50 Hz
I
TAVM500
180° sin
120°
60°
80 % VRRM
TVJ = 45°C
TVJ = 140°C
IFAVM
8000
TVJ = 45°C
30°
400
300
200
100
0
6000
4000
2000
0
TVJ = 140°C
105
104
0.001
0.01
0.1
s
1
1
10
0
25
50
75
100
TC
125
150
°C
ms
t
t
Fig. 3 Surge overload current
Fig. 4 I2t versus time (1-10 ms)
Fig. 4a Maximum forward current
I
TSM, IFSM: Crest value, t: duration
at case temperature
600
Fig. 5 Power dissipation versus on-
state current and ambient
temperature (per thyristor or
diode)
Ptot
RthKA K/W
W
0.06
0.1
0.2
0.3
0.4
0.6
0.8
500
400
300
200
100
0
DC
180° sin
120°
60°
30°
A
0
100
200
300
400
500
0
25
50
75
100
1°2C5
TA
150
ITAVM / IFAVM
3000
Fig. 6 Three phase rectifier bridge:
Power dissipation versus direct
output current and ambient
temperature
Ptot
W
RthKA K/W
0.02
0.04
0.07
0.1
2500
2000
1500
1000
500
0
0.15
0.2
0.3
Circuit
B6
33xxPMSCKCH331122 oorr
3xPSKT 312
3xMCD312
°C
125
0
200
400
600
800
0
25
50
75
100
150
A
TA
IdAVM
POWERSEM GmbH, Walpersdorfer Str. 53
D - 91126 Schwabach
2003 POWERSEM reserves the right to change limits, test conditions and dimensions
Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20
POWERSEM [ POWERSEM GMBH ]
