10000
106
A2s
550
A
VR = 0V
IFSM
I2t
DC
500
450
400
350
300
250
200
150
100
50
A
180° sin
120°
60°
IFAVM
50 Hz
8000
80 % VRRM
TVJ = 45°C
30°
TVJ = 150°C
6000
4000
2000
0
TVJ = 45°C
TVJ = 150°C
105
0
0.001
0.01
0.1
s
1
0
0
1
10
0
25
50
75
100 125 °C150
TC
ms
t
t
Fig. 1 Surge overload current
IFSM: Crest value, t: duration
Fig. 2 I2t versus time (1-10 ms)
Fig. 3 Maximum forward current
at case temperature
600
Ptot
Fig. 4 Power dissipation versus
forward current and ambient
temperature (per diode)
RthKA K/W
W
0.06
0.1
0.2
0.3
0.4
0.6
0.8
500
400
300
DC
180° sin
120°
60°
200
100
0
30°
0
100 200 300 400 500 A
IFAVM
25
50
75
100
1°2C5
TA
150
1750
Fig. 5 Single phase rectifier bridge:
Power dissipation versus direct
output current and ambient
temperature
Ptot
W
RthKA K/W
1500
0.04
0.06
0.08
0.12
0.2
R
L
1250
1000
750
500
250
0
R = resistive load
L = inductive load
0.3
0.5
Circuit
Circuit
B 2 U
B2U
2 x PSKD 312
2 x MDD312
°C
125
0
100 200 300 400 500 600
25
50
75
100
150
A
TA
IdAVM
2003 POWERSEM reserves the right to change limits, test conditions and dimensions
POWERSEM GmbH, Walpersdorfer Str. 53
D - 91126 Schwabach
Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20
POWERSEM [ POWERSEM GMBH ]
