24
mJ
18
120
ns
12
600
mJ
ns
Eoff
td(off)
10
500
90
60
30
0
Eoff
Eon
td(on)
t
t
8
6
4
2
0
400
300
200
100
0
VCE = 600 V
VGE = ±15 V
RG = 22 Ω
TJ = 125°C
12
6
tr
VCE = 600 V
GE = ±15 V
RG = 22 Ω
V
TJ = 125°C
Eon
tf
81T120
81T120
0
0
20
40
60
80
IC
100
A
0
20
40
60
80
IC
100
A
Fig. 7 Typ. turn on energy and switching
Fig. 8 Typ. turn off energy and switching
times versus collector current times
versus collector current
20
mJ
240
ns
10
mJ
8
1500
ns
1200
td(off)
Eoff
VCE = 600 V
GE = ±15 V
IC = 50 A
TJ = 125°C
td(on)
VCE = 600 V
GE = ±15 V
IC = 50 A
TJ = 125°C
V
V
15
10
5
180
Eoff
Eon
Eon
t
t
6
4
2
0
900
600
300
0
120
60
0
tr
tf
81T120
81T120
0
0
10 20 30 40 50 60 70 80 90 100
RG
0
10 20 30 40 50 60 70 80 90 100
RG
Ω
Ω
Fig. 9 Typ. turn on energy and switching
Fig. 10 Typ. turn off energy and switching
times versus gate resistor times
versus gate resistor
120
A
100
1
K/W
0,1
ICM
ZthJC
0,01
80
60
40
20
0
diode
IGBT
RG = 22 Ω
TJ = 125°C
VCEK < VCES
0,001
0,0001
single pulse
VID...75-12P1
81T120
0,00001
0,00001 0,0001 0,001
0,01
0,1
1
s
0
200 400 600 800 1000 1200 V
VCE
t
Fig. 11 Reverse biased safe operating area
Fig. 12 Typ. transient thermal impedance
RBSOA
2005 POWERSEM reserves the right to change limits, test conditions and dimensions
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D - 91126 Schwabach
Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20
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