8
mJ
6
80
ns
60
2,0
mJ
1,5
400
Eoff
VCE = 300V
VGE = ±15V
RG = 33Ω
TVJ = 125°C
ns
tr
300
Eoff
Eon
td(on)
VCE = 300V
VGE = ±15V
RG = 33Ω
TVJ = 125°C
t
t
td(off)
Eon
4
2
0
40
20
0
1,0
0,5
0,0
200
100
0
tf
25T60
25T60
0
20
40
60 A
0
20
40
60
A
IC
IC
Fig. 7 Typ. turn on energy and switching
Fig. 8 Typ. turn off energy and switching
times versus collector current times
versus collector current
4
mJ
3
80
ns
2,0
mJ
400
VCE = 300V
GE = ±15V
IC = 30A
td(on)
VCE = 300 V
VGE = ±15 V
IC = 30 A
TVJ = 125°C
td(off)
ns
V
Eoff
Eon
1,5
1,0
0,5
0,0
300
TVJ = 125°C
t
t
tr
60
40
20
Eoff
Eon
2
1
0
200
100
0
tf
25T60
25T60
0
10 20 30 40 50 60 70 Ω 80
0
10 20 30 40 50 60 70Ω 80
RG
RG
Fig. 9 Typ. turn on energy and switching
Fig. 10 Typ. turn off energy and switching
times versus gate resistor times
versus gate resistor
80
A
10
diode
IGBT
K/W
1
60
ZthJC
ICM
0,1
40
20
0
0,01
0,001
single pulse
RG = 33 Ω
T
VJ = 125°C
25T60
VDI...50-06P1
0,0001
0,000010,0001 0,001 0,01
0,1
1
10
s
0
100 200 300 400 500 600 700
VCE
V
t
Fig. 11 Reverse biased safe operating area
Fig. 12 Typ. transient thermal impedance
RBSOA
2005 POWERSEM reserves the right to change limits, test conditions and dimensions
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D - 91126 Schwabach
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