PSII 24/06
Diode
30
A
25
1.4
nC
1.2
40
A
T = 100°C
VVRJ= 300V
T = 100°C
VVRJ= 300V
30
IF
1.0
0.8
0.6
0.4
0.2
0.0
IRM
TVJ=150°C
TVJ=100°C
TVJ= 25°C
Qr
20
15
10
5
I = 20A
IFF= 5A
IF= 10A
I = 20A
IF= 10A
IFF= 5A
20
10
0
0
V
A/µs
0.0
0.5
1.0
1.5
2.0
2.5
100
1000
0
200 400 600 800 1000
A/µs
-diF/dt
VF
-diF/dt
Forward current IF versus VF
Reverse recovery charge Qr
versus -diF/dt
Peak reverse current IRM
versus -diF/dt
2.0
1.5
1.0
0.5
0.0
120
ns
20
V
1.2
T =100°C
VVRJ= 300V
µs
VFR
VFR
110
100
90
tfr
trr
15
0.9
Kf
tfr
I = 20A
IF= 10A
IFF= 5A
10
5
0.6
0.3
0.0
IRM
80
Qr
T = 100°C
IFVJ = 10A
70
8-06A
0
A/µs
0
40
80
120
TVJ
160
0
200 400 600 800 1000
0
200 400 600 800 1000
diF/dt
°C
A/µs
-diF/dt
Dynamic parameters Qr, IRM
Recovery time trr versus -diF/dt
Peak forward voltage VFR and tfr
versus TVJ
versus diF/dt
Transient thermal resistance junction to heatsink
10
1
(ZthJH is measured using 50 µm
thermal grease)
Fred
ZthJH[K/W]
0.1
D = 0
D = 0.005
D = 0.01
D = 0.02
D = 0.05
D = 0.1
D = 0.2
D = 0.5
0.01
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
t(s)
2002 POWERSEM reserves the right to change limits, test conditions and dimensions
POWERSEM GmbH, Walpersdorfer Str. 53
D - 91126 Schwabach
Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20
POWERSEM [ POWERSEM GMBH ]
