PSIG PSI PSIS PSSI 75/06
100
ns
400
10,0
mJ
4
td(on)
mJ
3
ns
Eoff
7,5
75
300
Eoff
Eon
t
t
tr
td(off)
50
25
0
200
100
0
5,0
2,5
0,0
2
1
0
VCE = 300 V
GE = ±15 V
RG = 22 Ω
VCE = 300 V
GE = ±15 V
RG = 22 Ω
TVJ = 125°C
V
V
TVJ = 125°C
Eon
tf
42T60
42T60
A
0
40
80
IC
120
A
0
40
80
IC
120
Fig. 7 Typ. turn on energy and switching
Fig. 8 Typ. turn off energy and switching
times versus collector current times
versus collector current
4
80
3
mJ
600
td(on)
Eon
mJ
ns
60
ns
Eoff
Eon
Eoff
t
t
3
2
1
2
1
0
400
tr
td(off)
VCE = 300 V
GE = ±15 V
IC = 50 A
TVJ = 125°C
VCE = 300 V
GE = ±15 V
IC = 50 A
TVJ = 125°C
V
V
40
200
tf
42T60
42T60
20
0
Ω
0
10
20
30
40
RG
50 Ω 60
0
10
20
30
40
RG
50
60
Fig. 9 Typ. turn on energy and switching
Fig. 10 Typ. turn off energy and switching
times versus gate resistor times
versus gate resistor
120
A
10
K/W
1
diode
IGBT
90
ZthJC
ICM
RG = 22 Ω
TVJ = 125°C
0,1
60
30
0
0,01
0,001
single pulse
42T60
VID...75-06P1
0,0001
0,000010,0001 0,001 0,01
0,1
1
s
10
0
100 200 300 400 500 600 700
VCE
V
t
Fig. 11 Reverse biased safe operating area
Fig. 12 Typ. transient thermal impedance
RBSOA
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D - 91126 Schwabach
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