PSHI 25/06
3
mJ
2
60
ns
2,0
mJ
1,5
400
VCE = 300V
GE = ±15V
RG = 68Ω
V
CE = 300V
td(on)
V
VGE = ±15V
RG = 68Ω
TVJ = 125°C
ns
300
TVJ = 125°C
Eoff
td(off)
t
t
40
20
0
tr
200
100
0
1,0
0,5
0,0
Eoff
1
0
Eon
tf
14T60
14T60
A
0
10
20
30
A
0
10
20
30
IC
IC
Fig. 7 Typ. turn on energy and switching
Fig. 8 Typ. turn off energy and switching
times versus collector current times
versuscollectorcurrent
2,0
mJ
1,5
60
0,8
mJ
0,6
400
VCE = 300V
GE = ±15V
IC = 15A
VCE = 300V
ns
V
VGE = ±15V
ns
45
td(off)
Eoff
td(on)
IC = 15A
TVJ = 125°C
300
Eoff
TVJ = 125°C
t
t
Eon
1,0
0,5
0,0
30
15
0
0,4
0,2
0,0
200
100
0
tr
tf
14T60
14T60
Ω
Ω
0
20
40
60
80
RG
100
120
0
20
40
60
80
RG
100
120
Fig. 9 Typ. turn on energy and switching
Fig. 10 Typ. turn off energy and switching
times versus gate resistor times
versusgateresistor
40
A
10
diode
K/W
1
ZthJC
IGBT
30
20
10
0
0,1
0,01
0,001
RG = 68 Ω
TVJ = 125°C
single pulse
14T60
VDI...25-06P1
0,0001
0,000010,0001 0,001 0,01
0,1
1
s
10
0
100 200 300 400 500 600 700
V
Fig. 11 Reversebiasedsafeoperatingarea
Fig.12 Typ.transientthermalimpedanceRBSOA
2003 POWERSEM reserves the right to change limits, test conditions and dimensions
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