PSDH 90
10
V
120
1: IGT, TVJ = 125°C
2: IGT, TVJ = 25°C
3: IGT, TVJ = -40°C
4: PGAV = 0.5 W
5: PGM = 5 W
DC
[A]
100
sin.180°
rec.120°
rec.60°
rec.30°
80
60
40
6: PGM = 10W
6
1
5
4
V
G
3
20
TAV
0
2
1
0.1
50
100
150
200
0
1
2
3
4
10
10
I
10
10
mA
10
G
T
(°C)
C
Fig.4 Gate trigger characteristic
Fig.5 Maximum forward current
at case temperature
K/W
1
Z
Z
thJK
0.8
0.6
0.4
0.2
thJC
Z
th
0.01
0.1
1
10
t[s]
Fig.6 Transient thermal impedance per thyristor or diode
(calculated)
80
400
TC
[W]
PSDH 90
85
0.14 0.08
0.2
=
RTHCA [K/W]
350
90
95
300
250
200
150
100
50
0.31
0.51
100
105
110
115
120
DC
sin.180°
rec.120°
rec.60°
rec.30°
1.14
°C
PVTOT
125
0
0
50
100
[K]
150
50
100
ITAVM
[A]
Tamb
Fig. 7 Power dissipation vs. direct output current and ambient
temperature
POWERSEM GmbH, Walpersdorfer Str. 53
91126 D- Schwabach
2005 POWERSEM reserves the right to change limits, test conditions and dimensions
Phone: 09122 - 9764-0 Fax.: 09122 - 9764-20
POWERSEM [ POWERSEM GMBH ]
