PSD 75
4
I
10
F(OV)
------
I
200
A
FSM
I
(A)
FSM
2
TVJ=45°C
1000
TVJ=150°C
850
As
1.6
1.4
1.2
1
160
T=150°C
120
80
TVJ=45°C
TVJ=150°C
0
V
RRM
0.8
0.6
1/2
1
V
RRM
40
V
RRM
T=25°C
3
I
F
10
1
0.4
10
2
4
6
10
0
t [ms]
0
1
2
3
10 t[ms] 10
10
V
V
1
1.5
F
Fig. 3 ∫i2dt versus time
Fig. 1 Forward current versus
voltage drop per diode
Fig. 2 Surge overload current
per diode IFSM: Crest value.
t: duration
(1-10ms) per diode (or thyristor)
85
300
TC
[W]
PSD 75
90
100
0.2 0.12 = RTHCA [K/W]
0.29
DC
95
250
200
150
[A]
sin.180°
100
105
110
115
120
125
130
135
140
145
rec.120°
80
rec.60°
rec.30°
0.45
60
40
20
0.79
1.79
100
DC
sin.180°
rec.120°
rec.60°
rec.30°
50
I
dAV
0
PVTOT
0
°C
50
100
150
200
150
T (°C)
C
0
50
100
150
25
IFAVM
75
[A]
Tamb
[K]
Fig. 4 Power dissipation versus direct output current and ambient Fig.5 Maximum forward current
temperature
at case temperature
2
K/W
Z
Z
1.5
1
thJK
thJC
0.5
Z
th
0.01
0.1
1
10
t[s]
Fig. 6 Transient thermal impedance per diode (or thyristor),
calculated
POWERSEM GmbH, Walpersdorfer Str. 53
91126 D- Schwabach
2003 POWERSEM reserves the right to change limits, test conditions and dimensions
Phone: 09122 - 9764-0 Fax.: 09122 - 9764-20
POWERSEM [ POWERSEM GMBH ]
