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PSBT75 参数 Datasheet PDF下载

PSBT75图片预览
型号: PSBT75
PDF下载: 下载PDF文件 查看货源
内容描述: 单相全控桥 [Single Phase Fully Controlled Bridges]
分类和应用:
文件页数/大小: 3 页 / 188 K
品牌: POWERSEM [ POWERSEM GMBH ]
 浏览型号PSBT75的Datasheet PDF文件第1页浏览型号PSBT75的Datasheet PDF文件第3页  
PSBT 75  
Symbol Test Conditions  
Characteristic Value  
TVJ = TVJM, VR = VRRM, VD = VDRM  
5
1.57  
0.85  
6
mA  
V
ID, IR  
VT  
IT = 150A, TVJ = 25°C  
For power-loss calculations only (TVJ = TVJM  
)
V
VTO  
mΩ  
rT  
VD = 6V  
VD = 6V  
TVJ = 25°C  
TVJ = -40°C  
TVJ = 25°C  
TVJ = -40°C  
1.0  
1.6  
V
V
VGT  
IGT  
100  
150  
mA  
mA  
TVJ = TVJM  
TVJ = TVJM  
TVJ = 25°C, tP = 10µs  
VD = 2/3 VDRM  
VD = 2/3 VDRM  
0.2  
5
200  
V
mA  
mA  
VGD  
IGD  
IL  
IG = 0.3A, diG/dt = 0.3A/µs  
150  
2
mA  
µs  
TVJ = 25°C, VD = 6V, RGK = ∞  
TVJ = 25°C, VD = ½ VDRM  
IG = 0.3A, diG/dt = 0.3A/µs  
IH  
tgd  
150  
TVJ = TVJM, IT = 20A, tP = 200µs, VR = 100V  
-di/dt = 10A/µs, dv/dt = 15V/µs, VD = 2/3 VDRM  
per thyristor; sine 180°el  
per module  
per thyristor; sine 180° el  
per module  
µs  
tq  
0.66  
0.165  
0.93  
0.2325  
K/W  
K/W  
K/W  
K/W  
RthJC  
RthJK  
Creeping distance on surface  
Creeping distance in air  
Max. allowable acceleration  
8.0  
4.5  
50  
mm  
mm  
dS  
dA  
a
m/s2  
300  
I
T(OV)  
------  
I
1:T = 125°C  
TSM  
VJ  
T
=25°C  
I
(A)  
TSM  
VJ  
[A]  
250  
us  
TVJ=45°C  
1150  
TVJ=150°C  
1000  
2:T = 25°C  
VJ  
1.6  
1.4  
1.2  
1
200  
150  
100  
50  
100  
t
gd  
10  
0
V
V
RRM  
0.8  
0.6  
0.4  
1/2  
1
V
RRM  
I
F
RRM  
1
2
0
1
100  
0.5  
1
F
1.5  
2
10  
1000  
0
1
2
3
V [V]  
I
[mA]  
10  
10  
t[ms] 10  
10  
G
Fig. 1 Forward current vs.  
voltage drop per diode or  
thyristor  
Fig. 2 Gate trigger delay time  
Fig. 3 Surge overload current  
per diode (or thyristor) IFSM  
TSM: Crest value t: duration  
,
I
POWERSEM GmbH, Walpersdorfer Str.53  
91126 D- Schwabach  
 2005 POWERSEM reserves the right to change limits, test conditions and dimensions  
Phone: 09122 - 9764-0 Fax.: 09122 - 9764-20