PSBT 75
Symbol Test Conditions
Characteristic Value
TVJ = TVJM, VR = VRRM, VD = VDRM
5
1.57
0.85
6
mA
V
≤
≤
ID, IR
VT
IT = 150A, TVJ = 25°C
For power-loss calculations only (TVJ = TVJM
)
V
VTO
mΩ
rT
VD = 6V
VD = 6V
TVJ = 25°C
TVJ = -40°C
TVJ = 25°C
TVJ = -40°C
1.0
1.6
V
V
≤
≤
VGT
IGT
100
150
mA
mA
≤
≤
TVJ = TVJM
TVJ = TVJM
TVJ = 25°C, tP = 10µs
VD = 2/3 VDRM
VD = 2/3 VDRM
0.2
5
200
V
mA
mA
≤
≤
VGD
IGD
IL
≤
IG = 0.3A, diG/dt = 0.3A/µs
150
2
mA
µs
TVJ = 25°C, VD = 6V, RGK = ∞
TVJ = 25°C, VD = ½ VDRM
IG = 0.3A, diG/dt = 0.3A/µs
≤
≤
IH
tgd
150
TVJ = TVJM, IT = 20A, tP = 200µs, VR = 100V
-di/dt = 10A/µs, dv/dt = 15V/µs, VD = 2/3 VDRM
per thyristor; sine 180°el
per module
per thyristor; sine 180° el
per module
µs
tq
0.66
0.165
0.93
0.2325
K/W
K/W
K/W
K/W
RthJC
RthJK
Creeping distance on surface
Creeping distance in air
Max. allowable acceleration
8.0
4.5
50
mm
mm
dS
dA
a
m/s2
300
I
T(OV)
------
I
1:T = 125°C
TSM
VJ
T
=25°C
I
(A)
TSM
VJ
[A]
250
us
TVJ=45°C
1150
TVJ=150°C
1000
2:T = 25°C
VJ
1.6
1.4
1.2
1
200
150
100
50
100
t
gd
10
0
V
V
RRM
0.8
0.6
0.4
1/2
1
V
RRM
I
F
RRM
1
2
0
1
100
0.5
1
F
1.5
2
10
1000
0
1
2
3
V [V]
I
[mA]
10
10
t[ms] 10
10
G
Fig. 1 Forward current vs.
voltage drop per diode or
thyristor
Fig. 2 Gate trigger delay time
Fig. 3 Surge overload current
per diode (or thyristor) IFSM
TSM: Crest value t: duration
,
I
POWERSEM GmbH, Walpersdorfer Str.53
91126 D- Schwabach
2005 POWERSEM reserves the right to change limits, test conditions and dimensions
Phone: 09122 - 9764-0 Fax.: 09122 - 9764-20
POWERSEM [ POWERSEM GMBH ]
