PSBT 125
10
V
140
[A]
120
100
80
1: IGT, TVJ = 125°C
2: IGT, TVJ = 25°C
3: IGT, TVJ = -40°C
4: PGAV = 0.5 W
5: PGM = 5 W
DC
sin.180°
rec.120°
rec.60°
rec.30°
6: PGM = 10W
6
1
60
5
40
4
V
G
3
20
I
2
TAV
0
1
50
100
150
200
T
(°C)
0.1
C
0
1
2
3
4
10
10
I
10
10
mA
10
G
Fig.4 Gate trigger characteristic
Fig.5 Maximum forward current
at case temperature
0.8
K/W
Z
0.6
0.4
0.2
thJK
Z
thJC
Z
th
0.01
0.1
1
10
t[s]
Fig.6 Transient thermal impedance per thyristor or diode
(calculated)
400
80
[W]
PSBT 125
TC
85
0.13 0.07
0.2
=
RTHCA [K/W]
350
90
300
250
200
150
100
50
95
0.3
100
105
110
115
120
0.51
1.13
DC
sin.180°
rec.120°
rec.60°
rec.30°
°C
PVTOT
0
125
0
50
100
[K]
150
25
75
125
ITAVM
[A]
Tamb
Fig. 7 Power dissipation vs. direct output current and ambient
temperature
POWERSEM GmbH, Walpersdorfer Str. 53
91126 D- Schwabach
2003 POWERSEM reserves the right to change limits, test conditions and dimensions
Phone: 09122 - 9764-0 Fax.: 09122 - 9764-20
POWERSEM [ POWERSEM GMBH ]
