PSBH 50
10
V
70
[A]
DC
1: IGT, TVJ = 125°C
2: IGT, TVJ = 25°C
3: IGT, TVJ = -40°C
4: PGAV = 0.5 W
5: PGM = 5 W
sin.180°
rec.120°
rec.60°
rec.30°
60
50
40
30
20
6: PGM = 10W
6
1
5
4
V
G
3
10
TAV
2
I
1
0
50
100
150
200
0.1
0
1
2
3
4
10
10
I
10
10
mA
10
T (°C)
C
G
Fig.4 Gate trigger characteristic
Fig.5 Maximum forward current
at case temperature
K/W
Z
Z
1.2
thJK
thJC
1
0.8
0.6
0.4
0.2
Z
th
0.01
0.1
1
10
t[s]
Fig.6 Transient thermal impedance per thyristor or diode
(calculated)
80
200
[W]
TC
85
PSBH 50
0.28 0.15
0.4
=
RTHCA [K/W]
175
90
95
150
125
0.61
1.02
100
105
110
115
120
100
75
DC
50
sin.180°
rec.120°
rec.60°
rec.30°
2.27
25
°C
125
PVTOT
0
0
50
100
[K]
150
10
ITAVM
30
50
[A]
Tamb
Fig. 7 Power dissipation vs. direct output current and ambient
temperature
POWERSEM GmbH, Walpersdorfer Str. 53
91126 D- Schwabach
2002 POWERSEM reserves the right to change limits, test conditions and dimensions
Phone: 09122 - 9764-0 Fax.: 09122 - 9764-20
POWERSEM [ POWERSEM GMBH ]
