PSB 82
4
I
10
F(OV)
FSM
200
[A]
------
I
2
I
(A)
As
FSM
TVJ=45°C
750
TVJ=150°C
670
1.6
1.4
1.2
1
150
TVJ=45°C
3
TVJ=150°C
10
100
0 V
RRM
0.8
0.6
50
IF
0
1/2 V
1 V
RRM
Tvj = 150°C
RRM
Tvj = 25°C
2
10
0.4
10
1
2
4
6
10
0
1
2
3
1
0.5
1.5
2
t [ms]
10 t[ms] 10
10
VF [V]
Fig. 3 ∫i2dt versus time
Fig. 1 Forward current versus
voltage drop per diode
Fig. 2 Surge overload current
per diode IFSM: Crest value.
t: duration
(1-10ms) per diode (or thyristor)
95
200
TC
[W]
PSB 82
80
100
0.350.22 = RTHCA [K/W]
DC
175
150
125
100
[A]
0.47
sin.180°
105
rec.120°
110
rec.60°
rec.30°
60
40
20
115
0.73
120
125
1.23
75
130
135
DC
50
sin.180°
rec.120°
rec.60°
rec.30°
2.72
140
I
dAV
25
145
0
PVTOT
0
°C
50
100
150
200
150
T (°C)
C
0
50
100
150
10
IFAVM
30
50
70
[A]
Tamb
[K]
Fig. 4 Power dissipation versus direct output current and ambient Fig.5 Maximum forward current
temperature
at case temperature
2
K/W
Z
Z
thJK
thJC
1.5
1
0.5
Z
th
0.01
0.1
1
10
t[s]
Fig. 6 Transient thermal impedance per diode (or thyristor),
calculated
POWERSEM GmbH, Walpersdorfer Str. 53
91126 D- Schwabach
2005 POWERSEM reserves the right to change limits, test conditions and dimensions
Phone: 09122 - 9764-0 Fax.: 09122 - 9764-20
POWERSEM [ POWERSEM GMBH ]
