200
150
100
50
I
F(OV)
------
I
FSM
I
(A)
FSM
TVJ=45°C
TVJ=150°C
500
1.6
1.4
1.2
1
550
0 V
RRM
0.8
0.6
0.4
1/2 V
1 V
RRM
T= 150°C
vj
RRM
T= 25°C
vj
0
2.0
V (V)
0.5 1.0 1.5
0
1
2
3
10
10 t[ms] 10
10
F
Forward current versus
voltage drop per diode
Surge overload current
per diode
IFSM: Crest value t: duration
1
DC
[A]
K/W
Z
thJK
thJC
sin.180°
rec.120°
rec.60°
rec.30°
0.8
0.6
0.4
0.2
120
100
80
Z
I
dAV
60
40
20
Z
th
0
0.01
0.1
1
10
50
100
150
200
t[s]
T (°C)
C
Transient thermal impedance per diode
Maximum forward current
at case temperature
POWERSEM GmbH, Walpersdorfer Str. 53
D - 91126 Schwabach
2002 POWERSEM reserves the right to change limits, test conditions and dimensions
Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20
POWERSEM [ POWERSEM GMBH ]
