PSB 55
200
[A]
4
1:T = 150°C
VJ
I
10
F(OV)
FSM
------
I
2
I
(A)
As
2:T = 25°C
VJ
FSM
TVJ=45°C
TVJ=150°C
670
150
100
50
1.6
1.4
1.2
1
750
TVJ=45°C
3
TVJ=150°C
10
0
V
RRM
0.8
0.6
1/2
1
V
RRM
I
F
1
2
V
RRM
2
0
10
0.5
1
1.5
2
2.5
2
t
4
[ms]
6
10
0.4
10
1
0
1
2
3
V [V]
F
10 t[ms] 10
10
Fig. 3 ∫i2dt versus time
Fig. 1 Forward current versus
voltage drop per diode
Fig. 2 Surge overload current
per diode IFSM: Crest value.
t: duration
(1-10ms) per diode (or thyristor)
70
85
100
DC
TC
[W]
PSB 55
90
sin.180°
rec.120°
rec.60°
.30°
[A]
0.6 0.35 = RTHCA [K/W]
0.85
95
80
60
100
105
110
115
120
125
130
135
140
145
50
1.35
2.35
5.35
30
10
40
DC
sin.180°
rec.120°
rec.60°
rec.30°
20
I
dAV
PVTOT
0
°C
150
0
0
50
100
150
10
IFAVM
30
50
100
150
20
[A]
Tamb
[K]
T (°C)
Fig. 4 Power dissipation versus direct output current and ambient
temperature
Fig.5 MaximumCforward current
at case temperature
4
K/W
Z
Z
thJK
thJC
3
2
1
Z
th
0.01
0.1
1
10
t[s]
Fig. 6 Transient thermal impedance per diode (or thyristor),
calculated
POWERSEM GmbH, Walpersdorfer Str. 53
91126 D- Schwabach
2003 POWERSEM reserves the right to change limits, test conditions and dimensions
Phone: 09122 - 9764-0 Fax.: 09122 - 9764-20
POWERSEM [ POWERSEM GMBH ]
