4
I
10
200
[A]
F(OV)
FSM
------
I
1:T = 150°C
VJ
2
I
(A)
As
FSM
TVJ=45°C
TVJ=150°C
500
2:T = 25°C
VJ
1.6
1.4
1.2
1
480
150
100
50
3
10
TVJ=45°C
TVJ=150°C
0
V
V
RRM
0.8
0.6
0.4
1/2
1
V
RRM
RRM
I
F
1
2
2
10
0
1
0
1
2
3
10
2
4
6
10
0.5
1
1.5
2
2.5
10
10 t[ms] 10
t [ms]
V [V]
F
Fig. 3 ∫i2dt versus time
(1-10ms) per diode (or thyristor)
Fig. 1 Forward current versus
voltage drop per diode
Fig. 2 Surge overload current
per diode IFSM: Crest value.
t: duration
50
70
[W]
TC
55
PSB 36
50
60
65
0.36
0.71
= RTHCA [K/W]
DC
60
50
40
30
[A]
40
sin.180°
rec.120°
rec.60°
rec.30°
70
75
80
85
1.43
2.86
7.14
90
30
20
10
95
100
105
110
115
120
125
130
135
140
145
DC
20
sin.180°
rec.120°
rec.60°
rec.30°
10
I
dAV
PVTOT
0
°C
150
0
50
100
150
200
20
0
50
100
[K]
150
T (°C)
C
IFAVM
[A]
Tamb
Fig. 4 Power dissipation versus direct output current and ambient temperature
Fig.5 Maximum forward current
at case temperature
8
K/W
Z
thJK
6
Z
thJC
4
2
Z
th
0.01
0.1
1
10
t[s]
Fig. 6 Transient thermal impedance per diode (or thyristor), calculated
POWERSEM GmbH, Walpersdorfer Str. 53
D - 91126 Schwabach
2002 POWERSEM reserves the right to change limits, test conditions and dimensions
Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20
POWERSEM [ POWERSEM GMBH ]
