I
I
F(OV)
FSM
------
30
A
I
(A)
3
FSM
10
TVJ=45°C
TVJ=150°C
340
2
1.6
1.4
1.2
1
380
As
T=150°C
25
20
15
10
5
TVJ=45°C
TVJ=150°C
0
V
RRM
0.8
0.6
1/2
V
RRM
1
V
RRM
I
T=25°C
F
2
0
0.4
10
10
V
F
V
0
1
2
3
1
2
4
6
10
1
1.5
10 t[ms] 10
10
t [ms]
Fig. 3 ∫i2dt versus time
(1-10ms) per diode (or thyristor)
Fig. 1 Forward current versus
voltage drop per diode
Fig. 2 Surge overload current
per diode IFSM: Crest value.
t: duration
50
[W]
30
50
TC
55
PSB 25
DC
0.45-0.05 = RTHCA [K/W]
[A]
sin.180°
rec.120°
rec.60°
rec.30°
60
0.95
65
70
40
75
80
20
85
1.95
3.95
9.95
30
20
10
90
95
100
105
110
115
120
125
130
135
140
10
DC
sin.180°
rec.120°
rec.60°
rec.30°
I
dAV
0
50
100
150
200
PVTOT
0
145
°C
150
T (°C)
C
0
50
100
150
20
IFAVM
[A]
Tamb
[K]
Fig. 4 Power dissipation versus direct output current and ambient temperature
Fig.5 Maximum forward current
at case temperature
10
Z
Z
thJK
thJC
8
K/W
6
4
2
Z
th
0.01
0.1
1
10
t[s]
Fig. 6 Transient thermal impedance per diode (or thyristor), calculated
POWERSEM GmbH, Walpersdorfer Str. 53
D - 91126 Schwabach
2001 POWERSEM reserves the right to change limits, test conditions and dimensions
Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20
POWERSEM [ POWERSEM GMBH ]
