PSB 162
5
I
10
F(OV)
FSM
------
I
200
[A]
I
(A)
2
FSM
As
TVJ=45°C
1800
TVJ=150°C
1600
1.6
1.4
1.2
1
150
TVJ=45°C
4
10
100
TVJ=150°C
0
V
V
RRM
0.8
0.6
50
IF
0
1/2
1
V
RRM
Tvj = 150°C
RRM
3
Tvj = 25°C
10
1
2
4
6
10
0.4
10
t [ms]
1
0.5
1.5
2
0
1
2
3
10
t[ms] 10
10
VF [V]
Fig. 3 ∫i2dt versus time
Fig. 1 Forward current versus
voltage drop per diode
Fig. 2 Surge overload current
per diode IFSM: Crest value.
t: duration
(1-10ms) per diode (or thyristor)
70
TC
75
400
150
[W]
DC
PSB 162
80
85
0.120.05 = RTHCA [K/W]
0.18
[A]
sin.180°
rec.120°
rec.60°
rec.30°
350
300
250
200
90
95
100
100
105
110
115
120
125
130
135
140
145
0.31
0.56
1.3
50
150
DC
100
sin.180°
rec.120°
rec.60°
rec.30°
I
dAV
0
50
PVTOT
0
°C
50
100
150
200
150
T
(°C)
0
50
100
150
25
IFAVM
75
125
C
[A]
Tamb
[K]
Fig.5 Maximum forward current
at case temperature
Fig. 4 Power dissipation versus direct output current and ambient
temperature
1
K/W
Z
thJK
thJC
0.8
0.6
0.4
0.2
Z
Z
th
0.01
0.1
1
10
t[s]
Fig. 6 Transient thermal impedance per diode (or thyristor),
calculated
POWERSEM GmbH, Walpersdorfer Str. 53
91126 D- Schwabach
2005 POWERSEM reserves the right to change limits, test conditions and dimensions
Phone: 09122 - 9764-0 Fax.: 09122 - 9764-20
POWERSEM [ POWERSEM GMBH ]
