PSB 105
5
I
10
F(OV)
------
I
200
A
FSM
I
(A)
2
FSM
As
TVJ=45°C
1500
TVJ=150°C
1350
1.6
1.4
1.2
1
160
T=150°C
120
80
4
10
TVJ=45°C
TVJ=150°C
0 V
RRM
0.8
0.6
1/2 V
1 V
RRM
T=25°C
40
RRM
3
10
I
F
1
2
4
6
10
0.4
10
t [ms]
0
1
2
3
0
10 t[ms] 10
10
1
1.5
V
V
F
Fig. 3 ∫i2dt versus time
Fig. 1 Forward current versus
voltage drop per diode
Fig. 2 Surge overload current
per diode IFSM: Crest value.
t: duration
(1-10ms) per diode (or thyristor)
80
300
TC
120
85
[W]
PSB 105
DC
0.190.11 = RTHCA [K/W]
0.28
90
[A]
sin.180°
rec.120°
250
200
150
95
rec.60°
rec.30°
90
60
30
100
105
110
115
120
125
130
135
140
145
0.44
0.77
1.77
100
DC
sin.180°
rec.120°
rec.60°
rec.30°
I
dAV
0
50
50
100
150
200
PVTOT
°C
T
(°C)
C
150
0
0
50
100
150
50
100
IFAVM
[A]
Tamb
[K]
Fig. 4 Power dissipation versus direct output current and ambient Fig.5 Maximum forward current
temperature at case temperature
1.5
K/W
Z
Z
thJK
thJC
1
0.5
Z
th
0.01
0.1
1
10
t[s]
Fig. 6 Transient thermal impedance per diode (or thyristor),
calculated
POWERSEM GmbH, Walperdorfer Str.53
91126 D- Schwabach
2003 POWERSEM reserves the right to change limits, test conditions and dimensions
Phone: 09122 - 9764-0 Fax.: 09122 - 9764-20
POWERSEM [ POWERSEM GMBH ]
