LXA04T600, LXA04B600
Electrical Specifications at TJ= 25 C (unless otherwise specified)
Symbol Parameter
Conditions
Min
Typ
Max
Units
DC Characteristics
IR
Reverse current
VR = 600V, TJ = 25 °C
VR = 600V, TJ = 125 °C
IF = 4A, TJ = 25 °C
IF = 4A, TJ = 150 °C
VR = 10V, 1 MHz
-
-
-
-
-
-
250
A
mA
V
0.45
2.42
2.10
21
-
VF
CJ
Forward voltage
Junction capacitance
2.96
-
-
V
pF
Dynamic Characteristics
tRR
QRR
IRRM
S
Reverse recovery time
TJ=25 °C
-
-
-
-
-
-
-
-
18.5
27.5
21.1
50.0
1.75
2.6
-
ns
ns
nC
nC
A
dI/dt =200 A/s
VR=400 V, IF=4 A
TJ=125 °C
TJ=25 °C
-
Reverse recovery charge
29.0
dI/dt =200A/s
VR=400 V, IF=4 A
TJ =125 °C
TJ =25 °C
TJ=125 °C
TJ =25 °C
TJ=125 °C
-
2.3
-
Maximum reverse
recovery current
dI/dt =200 A/s
VR=400 V, IF=4 A
A
0.8
-
dI/dt =200 A/s
VR=400 , IF=4 A
t
t
b
a
Softness factor =
0.8
-
Note to component engineers: QSpeed diodes employ Schottky technologies in their design and construction.
Therefore, Component Engineers should plan their test setups to be similar to those for traditional Schottky test setups.
(For additional details, see Application Note AN-300.)
VR
D1
DUT
L1
IF
tRR
15V
+
Pulse generator
dIF/dt
Rg
ta
tb
Q1
0
0.1xIRRM
IRRM
Figure 2. Reverse Recovery Test Circuit
Figure 1. Reverse Recovery Definitions
2
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Rev 1.4 01/11
POWERINT [ Power Integrations ]
