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LNK625PG 参数 Datasheet PDF下载

LNK625PG图片预览
型号: LNK625PG
PDF下载: 下载PDF文件 查看货源
内容描述: 能源艾菲cient ,离线式开关,提供精确的初级侧恒压( CV )控制 [Energy-Effi cient, Off-line Switcher with Accurate Primary-side Constant-Voltage (CV) Control]
分类和应用: 开关
文件页数/大小: 18 页 / 533 K
品牌: POWERINT [ Power Integrations ]
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LNK623-626  
Clampless Designs  
shown on the right of Figure ±± where pulse grouping has  
caused an increase in the output ripple.  
Clampless designs rely solely on the drain node capacitance to  
limit the leakage inductance induced peak drain-to-source  
voltage. Therefore the maximum AC input line voltage, the value  
of VOR, the leakage inductance energy, (a function of leakage  
inductance and peak primary current), and the primary winding  
capacitance determine the peak drain voltage. With no signifi-  
cant dissipative element present, as is the case with an external  
clamp, the longer duration of the leakage inductance ringing can  
increase EMI.  
To eliminate group pulsing verify that the feedback signal settles  
within 2.± μs from the turn off of the internal MOSFET. A Zener  
diode in the clamp circuit may be needed to achieve the desired  
settling time. If the settling time is satisfactory, then a RC  
network across RLOWER (R6) of the feedback resistors is  
necessary.  
The value of R (R1 in the Figure ±2) should be an order of  
magnitude greater than RLOWER and selected such that  
R×C = 32 μs where C is C1 in Figure ±2.  
The following requirements are recommended for a universal  
input or 230 VAC only Clampless design:  
±. Clampless designs should only be used for PO ≤1 W using a  
Quick Design Checklist  
V
OR of ≤90 V  
2. For designs with PO ≤1 W, a two-layer primary must be used  
to ensure adequate primary intra-winding capacitance in the  
range of 21 pF to 10 pF. A bias winding must be added to  
the transformer using a standard recovery rectifier diode  
(±N4003– ±N4007) to act as a clamp. This bias winding may  
also be used to externally power the device by connecting a  
resistor from the bias winding capacitor to the BYPASS pin.  
This inhibits the internal high-voltage current source,  
reducing device dissipation and no-load consumption.  
3. For designs with PO >1 W, Clampless designs are not practical  
and an external RCD or Zener clamp should be used.  
4. Ensure that worst-case, high line, peak drain voltage is below  
the BVDSS specification of the internal MOSFET and ideally  
≤610 V to allow margin for design variation.  
As with any power supply design, all LinkSwitch-CV designs  
should be verified on the bench to make sure that component  
specifications are not exceeded under worst-case conditions.  
5
D6  
1N4148  
4
R3  
6.34 k7  
1%  
2
LinkSwitch-CV  
U1  
LNK626PG  
D
S
FB  
BP  
V
OR (Reflected Output Voltage), is the secondary output plus  
R5  
R4  
6.2 k7  
output diode forward voltage drop that is reflected to the primary  
via the turns ratio of the transformer during the diode conduction  
time. The VOR adds to the DC bus voltage and the leakage spike  
to determine the peak drain voltage.  
47 k7  
1/8 W  
R6  
C6  
4.02 k7  
10 MF  
C4  
C5  
680 pF  
50 V  
1%  
50 V  
1 MF  
50 V  
Pulse Grouping  
PI-5268-110608  
Pulse grouping is defined as 6 or more consecutive pulses  
followed by two or more timing state changes. The effect of  
pulse grouping is increased output voltage ripple. This is  
Figure 12. RC Network Across RBOTTOM (R6) to Reduce Pulse Grouping.  
Top Trace: Drain Waveform (200 V/div)  
Bottom Trace: Output Ripple Voltage (10 mV/div)  
Split Screen with Bottom Screen Zoom  
Top Trace: Drain Waveform (200 V/div)  
Bottom Trace: Output Ripple Voltage (10 mV/div)  
Figure 11. Not Pulse Grouping (<5 Consecutive Switching Cycles).  
Pulse Grouping (>5 Consecutive Switching Cycles).  
9
www.powerint.com  
Rev. E 09/09