BS08D-T112
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272
www.pwrx.com
Silicon Bilateral Switch
C
B
K
J
D
D
A
H
G
G
F
E
1
2
3
CONNECTION DIAGRAM
1
T2 TERMINAL
2
GATE
3
Description:
The BS08D-T112 bilateral switch
is a silicon planar monolithic
integrated circuit with the
electrical characteristics of a
bilateral thyristor. The device is
designed to switch at 7 to 9 volts
with a 0.01%/°C temperature
coefficient and have excellently
matched characteristics in both
directions.
Features:
£
Low Switching Voltage of
7 to 9 Volts
£
Excellent Switching Voltage
Temperature Characteristics
(0.01%/°C)
£
High Reliability Devices
£
Gate Electrode Facilitating
Switching Operation Control
and Synchronization
Applications:
£
Trigger Circuits for Thyristor or
Triac, Oscillators, Timers
Ordering Information:
BS08D-T112 is tape and fancil
packaged (2500/box).
T1 TERMINAL
Outline Drawing and Circuit Diagram
Dimension
A
B
C
D
E
Inches
0.55 Min.
0.12 Max.
0.16
0.39
0.098 Max.
Millimeters
14.0 Min.
3.0 Max.
4.0
1.0
2.5 Max.
Dimension
F
G
H
J
K
Inches
0.016
0.10
0.018
0.004
0.29 Max.
Millimeters
0.4
2.5
0.45
0.1
7.5 Max.
2/11 Rev. 1
1
POWEREX [ POWEREX POWER SEMICONDUCTORS ]
