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BCR1AM-8 参数 Datasheet PDF下载

BCR1AM-8图片预览
型号: BCR1AM-8
PDF下载: 下载PDF文件 查看货源
内容描述: 铅安装可控硅1安培/ 400-600伏特 [Lead-Mount Triac 1 Ampere/400-600 Volts]
分类和应用: 栅极可控硅三端双向交流开关
文件页数/大小: 4 页 / 73 K
品牌: POWEREX [ POWEREX POWER SEMICONDUCTORS ]
 浏览型号BCR1AM-8的Datasheet PDF文件第1页浏览型号BCR1AM-8的Datasheet PDF文件第3页浏览型号BCR1AM-8的Datasheet PDF文件第4页  
Powerex, Inc., 200 Hillis Street,Youngwood, Pennsylvania 15697-1800 (412) 925-7272  
BCR1AM  
Lead-Mount Triac  
1 Ampere/400-600 Volts  
Absolute Maximum Ratings, T = 25 °C unless otherwise specified  
a
Ratings  
Symbol  
BCR1AM-8  
BCR1AM-12  
Units  
Volts  
Repetitive Peak Off-state Voltage (Gate Open)  
Non-repetitive Peak Off-state Voltage (Gate Open)  
V
DRM  
DSM  
400  
600  
V
500  
720  
Volts  
On-state Current, T = 56°C  
a
I
1
1
Amperes  
Amperes  
Amperes  
T(RMS)  
Non-repetitive Peak Surge, One Cycle (60 Hz)  
Non-repetitive Peak Surge, One Cycle (50 Hz)  
I
10  
10  
TSM  
TSM  
I
9.1  
9.1  
2
2
I t  
2
I t for Fusing, t = 8.3 msec  
0.4  
0.4  
A sec  
Peak Gate Power Dissipation, 20 sec  
Average Gate Power Dissipation  
Peak Gate Current  
P
1
1
Watts  
Watts  
Amperes  
Volts  
GM  
P
0.1  
0.1  
G(avg)  
I
1
1
GM  
Peak Gate Voltage  
V
6
6
GM  
Storage Temperature  
Operating Temperature  
Weight  
T
-40 to 125  
-40 to 125  
0.23  
-40 to 125  
-40 to 125  
0.23  
°C  
stg  
T
°C  
j
Grams  
Electrical and Thermal Characteristics, Tj = 25 °C unless otherwise specified  
Test Conditions (Trigger Mode)  
BCR1AM  
Characteristics*  
Symbol  
V
D
R
L
R
G
T
j
Min.  
Typ.  
Max.  
Units  
Gate – Parameters  
DC Gate Trigger Current  
MT2+ Gate+  
MT2+ Gate–  
6V  
6V  
6V  
6V  
6⍀  
6⍀  
6⍀  
6⍀  
330⍀  
330⍀  
330⍀  
330⍀  
25°C  
25°C  
25°C  
25°C  
5
5
mA  
mA  
mA  
mA  
I
GT  
MT2– Gate–  
5
MT2– Gate+  
10  
DC Gate Trigger Voltage  
MT2+ Gate+  
6V  
6V  
6V  
6V  
6⍀  
6⍀  
6⍀  
6⍀  
330⍀  
330⍀  
330⍀  
330⍀  
25°C  
25°C  
25°C  
25°C  
2
2
2
2
Volts  
Volts  
Volts  
Volts  
MT2+ Gate–  
V
GT  
MT2– Gate–  
MT2– Gate+  
DC Gate Non-trigger Voltage  
All  
V
1/2 V  
DRM  
125°C  
0.1  
Volts  
GD  
*Characteristic values apply for either polarity of Main Terminal 2 referenced to Main Terminal 1.  
Characteristics  
Symbol  
Test Conditions  
Min.  
Typ.  
Max.  
50  
Units  
°C/W  
°C/W  
Thermal Resistance, Junction-to-case  
R
th(j-c)  
th(j-a)  
Steady State Thermal Resistance,  
Junction-to-ambient  
R
120  
Voltage – Blocking State  
Repetitive Off-state Current  
I
Gate Open Circuited,  
1
mA  
DRM  
V
= V , T = 125°C  
DRM j  
D
Current – Conducting State  
Peak On-state Voltage  
V
T = 25°C, 8.3ms Pulsewidth  
1.6  
Volts  
V/s  
TM  
c
Duty Cycle <2%, I  
= 1.5A  
TM  
Critical Rate-of-Rise of Commutating  
Off-state Voltage (Commutating dv/dt)  
(Switching)  
(dv/dt)  
c
T-2