Powerex, Inc., 200 Hillis Street,Youngwood, Pennsylvania 15697-1800 (412) 925-7272
BCR16HM
Isolated Triac
16 Amperes/400-600 Volts
Absolute Maximum Ratings, T = 25 °C unless otherwise specified
a
Ratings
Symbol
BCR16HM-8
BCR16HM-12
Units
Volts
Repetitive Peak Off-state Voltage
Non-repetitive Peak Off-state Voltage (Gate Open)
V
DRM
DSM
400
600
V
500
720
Volts
On-state Current, T = 82°C
a
I
16
16
Amperes
Amperes
T(RMS)
Non-repetitive Peak Surge, One Cycle (60 Hz)
I
170
170
TSM
2
2
I t
2
I t for Fusing, t = 8.3 msec
121
121
A sec
Peak Gate Power Dissipation, 20 sec
Average Gate Power Dissipation
Peak Gate Current
P
5
0.5
5
0.5
Watts
Watts
Amperes
Volts
GM
P
G(avg)
I
2
2
GM
Peak Gate Voltage
V
10
10
GM
Storage Temperature
Operating Junction Temperature
Isolation Voltage
T
-40 to 125
-40 to 125
-40 to 125
-40 to 125
°C
stg
T
°C
j
V
iso
2200
26
2200
26
Volts
Weight
–
Grams
Electrical and Thermal Characteristics, T = 25 °C unless otherwise specified
j
Test Conditions (Trigger Mode)
BCR16HM
Typ.
Characteristics
Symbol
V
D
R
L
T
j
Min.
Max.
Units
Gate Parameters
DC Gate Trigger Current
MT2+ Gate+
MT2+ Gate–
6V
6V
6V
6⍀
6⍀
6⍀
25°C
25°C
25°C
–
–
–
–
–
–
30
30
30
mA
mA
mA
I
GT
MT2– Gate–
DC Gate Trigger Voltage
MT2+ Gate+
6V
6V
6V
6⍀
6⍀
6⍀
25°C
25°C
25°C
–
–
–
–
–
–
1.5
Volts
Volts
Volts
MT2+ Gate–
V
1.5
1.5
GT
MT2– Gate–
DC Gate Non-trigger Voltage
All
V
1/2 V
DRM
–
125°C
2
–
–
Volts
GD
Characteristics
Symbol
Test Conditions
Min.
–
Typ.
–
Max.
Units
°C/W
mA
Thermal Resistance, Junction-to-base
R
th(j-b)
DRM
–
2
3
Voltage – Blocking State
Repetitive Off-state Current
I
Gate Open Circuited,
V = V , T = 125°C
D
–
–
DRM
j
Current – Conducting State
Peak On-state Voltage
V
T = 25°C,
–
–
–
–
1.6
–
Volts
TM
c
I
= 25A Peak
TM
Critical Rate-of-rise of Commutating
Off-state Voltage (Commutating dv/dt)
▲ for inductive load (L)
(dv/dt)
–
V/s
c
(Switching)
T-76
POWEREX [ POWEREX POWER SEMICONDUCTORS ]
