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BCR16HM-12L 参数 Datasheet PDF下载

BCR16HM-12L图片预览
型号: BCR16HM-12L
PDF下载: 下载PDF文件 查看货源
内容描述: [TRIAC, 600V V(DRM), 16A I(T)RMS]
分类和应用: 局域网三端双向交流开关栅极
文件页数/大小: 4 页 / 71 K
品牌: POWEREX [ POWEREX POWER SEMICONDUCTORS ]
 浏览型号BCR16HM-12L的Datasheet PDF文件第1页浏览型号BCR16HM-12L的Datasheet PDF文件第3页浏览型号BCR16HM-12L的Datasheet PDF文件第4页  
Powerex, Inc., 200 Hillis Street,Youngwood, Pennsylvania 15697-1800 (412) 925-7272  
BCR16HM  
Isolated Triac  
16 Amperes/400-600 Volts  
Absolute Maximum Ratings, T = 25 °C unless otherwise specified  
a
Ratings  
Symbol  
BCR16HM-8  
BCR16HM-12  
Units  
Volts  
Repetitive Peak Off-state Voltage  
Non-repetitive Peak Off-state Voltage (Gate Open)  
V
DRM  
DSM  
400  
600  
V
500  
720  
Volts  
On-state Current, T = 82°C  
a
I
16  
16  
Amperes  
Amperes  
T(RMS)  
Non-repetitive Peak Surge, One Cycle (60 Hz)  
I
170  
170  
TSM  
2
2
I t  
2
I t for Fusing, t = 8.3 msec  
121  
121  
A sec  
Peak Gate Power Dissipation, 20 sec  
Average Gate Power Dissipation  
Peak Gate Current  
P
5
0.5  
5
0.5  
Watts  
Watts  
Amperes  
Volts  
GM  
P
G(avg)  
I
2
2
GM  
Peak Gate Voltage  
V
10  
10  
GM  
Storage Temperature  
Operating Junction Temperature  
Isolation Voltage  
T
-40 to 125  
-40 to 125  
-40 to 125  
-40 to 125  
°C  
stg  
T
°C  
j
V
iso  
2200  
26  
2200  
26  
Volts  
Weight  
Grams  
Electrical and Thermal Characteristics, T = 25 °C unless otherwise specified  
j
Test Conditions (Trigger Mode)  
BCR16HM  
Typ.  
Characteristics  
Symbol  
V
D
R
L
T
j
Min.  
Max.  
Units  
Gate Parameters  
DC Gate Trigger Current  
MT2+ Gate+  
MT2+ Gate–  
6V  
6V  
6V  
6⍀  
6⍀  
6⍀  
25°C  
25°C  
25°C  
30  
30  
30  
mA  
mA  
mA  
I
GT  
MT2– Gate–  
DC Gate Trigger Voltage  
MT2+ Gate+  
6V  
6V  
6V  
6⍀  
6⍀  
6⍀  
25°C  
25°C  
25°C  
1.5  
Volts  
Volts  
Volts  
MT2+ Gate–  
V
1.5  
1.5  
GT  
MT2– Gate–  
DC Gate Non-trigger Voltage  
All  
V
1/2 V  
DRM  
125°C  
2
Volts  
GD  
Characteristics  
Symbol  
Test Conditions  
Min.  
Typ.  
Max.  
Units  
°C/W  
mA  
Thermal Resistance, Junction-to-base  
R
th(j-b)  
DRM  
2
3
Voltage – Blocking State  
Repetitive Off-state Current  
I
Gate Open Circuited,  
V = V , T = 125°C  
D
DRM  
j
Current – Conducting State  
Peak On-state Voltage  
V
T = 25°C,  
1.6  
Volts  
TM  
c
I
= 25A Peak  
TM  
Critical Rate-of-rise of Commutating  
Off-state Voltage (Commutating dv/dt)  
for inductive load (L)  
(dv/dt)  
V/s  
c
(Switching)  
T-76