MITSUBISHI SEMICONDUCTOR TRIAC
BCR16CS
MEDIUM POWER USE
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
ALLOWABLE AMBIENT TEMPERATURE
VS. RMS ON-STATE CURRENT
ALLOWABLE AMBIENT TEMPERATURE
VS. RMS ON-STATE CURRENT
160
160
NATURAL CONVECTION
NO FINS
CURVES APPLY REGARDLESS
OF CONDUCTION ANGLE
ALL FINS ARE COPPER
AND ALUMINUM
CURVES APPLY REGARDLESS
OF CONDUCTION ANGLE
140
120
100
80
140
120
RESISTIVE, INDUCTIVE LOADS
100
120 120 t2.3
100 100 t2.3
60 60 t2.3
80
60
40
20
0
60
RESISTIVE,
40 INDUCTIVE
LOADS
20
NATURAL
CONVECTION
0
0
2
4
6
8
10 12 14 16 18 20
0
0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2
RMS ON-STATE CURRENT (A)
RMS ON-STATE CURRENT (A)
REPETITIVE PEAK OFF-STATE
CURRENT VS. JUNCTION
TEMPERATURE
HOLDING CURRENT VS.
JUNCTION TEMPERATURE
103
7
5
4
105
7
TYPICAL EXAMPLE
TYPICAL EXAMPLE
5
3
2
3
104
7
5
3
2
2
102
7
103
7
5
5
4
3
3
2
2
101
102
–60–40–20 0 20 40 60 80 100120140
–60–40–20 0 20 40 60 80 100120140
JUNCTION TEMPERATURE (°C)
JUNCTION TEMPERATURE (°C)
LACHING CURRENT VS.
JUNCTION TEMPERATURE
BREAKOVER VOLTAGE VS.
JUNCTION TEMPERATURE
103
160
7
5
TYPICAL EXAMPLE
DISTRIBUTION T+
2
, G–
140
120
100
80
3
2
TYPICAL
EXAMPLE
102
7
5
3
2
60
101
7
5
40
3
2
T+
2
, G+ TYPICAL
, G– EXAMPLE
20
T–
2
100
0
–40
0
40
80
120
160
–60–40–20 0 20 40 60 80 100120140
JUNCTION TEMPERATURE (°C)
JUNCTION TEMPERATURE (°C)
Feb.1999