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AY08A4-14 参数 Datasheet PDF下载

AY08A4-14图片预览
型号: AY08A4-14
PDF下载: 下载PDF文件 查看货源
内容描述: 16引脚的多个电路双向可控硅 [16-Pin Multiple Circuit Triac]
分类和应用: 可控硅
文件页数/大小: 2 页 / 65 K
品牌: POWEREX [ POWEREX POWER SEMICONDUCTORS ]
 浏览型号AY08A4-14的Datasheet PDF文件第1页  
Powerex, Inc., 200 Hillis Street,Youngwood, Pennsylvania 15697-1800 (724) 925-7272  
AY08A3-**  
AY08A4-**  
16-Pin Multiple Circuit Triac  
0.8 Amperes/400-700 Volts  
Absolute Maximum Ratings (for One Chip), T = 25°C unless otherwise specified  
j
Characteristics  
Symbol  
AY08A*-08  
AY08A*-12  
AY08A*-14  
Units  
Repetitive Peak Off-state Voltage, Gate Open  
V
400  
600  
700  
Volts  
Volts  
DRM  
Non-Repetitive Peak Off-state Voltage, Gate Open  
V
500  
720  
840  
DSM  
On-state Current, T = 86°C  
I
0.8  
0.8  
0.8  
Amperes  
Amperes  
c
T(RMS)  
Non-repetitive Peak Surge, One Cycle (60Hz)  
I
8
8
8
TSM  
2
2
2
I t for Fusing, t = 8.3 msec  
I t  
0.26  
0.26  
0.26  
A sec  
Peak Gate Power Dissipation, 20 msec  
Average Gate Power Dissipation  
Peak Gate Current  
P
1
0.1  
1
0.1  
1
0.1  
Watts  
Watts  
Amperes  
Volts  
GM  
P
G(avg)  
I
0.8  
0.8  
0.8  
GM  
Peak Gate Voltage  
V
GM  
6
6
6
Storage Temperature  
T
-40 to 125  
-40 to 125  
-40 to 125  
-40 to 125  
-40 to 125  
-40 to 125  
°C  
stg  
Operating Temperature  
T
°C  
j
Electrical and Thermal Characteristics (for One Chip), T = 25°C unless otherwise specified  
j
Characteristics  
Symbol  
Test Conditions  
Min.  
Typ.  
Max.  
1.0  
2.0  
Units  
Repetitive Off-state Current, Peak  
Peak On-state Voltage  
I
V
applied, T = 125°C  
mA  
DRM  
DRM  
j
V
TM  
T = 25°C, I  
= 1.2A  
Volts  
c
TM  
Thermal Resistance  
Junction to Ambient  
R
120  
°C/Watt  
th(j-a)  
Gate — Parameters  
Gate Current to Trigger II  
Gate Current to Trigger III  
Gate Voltage to Trigger II  
Gate Voltage to Trigger III  
Non-triggering Gate Voltage  
Critical Rate-of-Rise of Commutating  
Off-state Voltage  
I
I
T = 25°C, V = 6V  
5.0  
5.0  
2.0  
2.0  
mA  
mA  
RGT  
j
D
I
III  
R = 6, R = 330⍀  
RGT  
L
G
V
I
T = 25°C, V = 6V  
Volts  
Volts  
Volts  
V/µs  
RGT  
j
D
V
III  
R = 6, R = 330⍀  
RGT  
L
G
V
T = 125°C, V = 1/2 V  
DRM  
0.1  
0.5  
GD  
j
D
(dv/dt)  
T = 125°C  
j
c
(dv/dt) = -0.4A/ms, V = 400V  
c
D
2