POSEICO
ATG777 GATE TURN-OFF THYRISTOR
POSEICO SPA
POwer SEmiconductors Italian COrporation
FINAL SPECIFICATION nov 06 - ISSUE : 03
ON-STATE CHARACTERISTIC
Tj = 125 °C
SURGE CHARACTERISTIC
Tj = 125 °C
3000
2500
2000
1500
1000
500
18
16
14
12
10
8
6
4
2
0
0
0,6
1,6
2,6
3,6
1
10
100
On-state Voltage [V]
n° cycles
TRANSIENT THERMAL IMPEDANCE
DOUBLE SIDE COOLED
20
18
16
14
12
10
8
6
4
2
0
0,001
0,01
0,1
1
10
t[s]
Distributed by
All the characteristics given in this data sheet are guaranteed only with uniform
clamping force, cleaned and lubricated heatsink, surfaces with flatness < .03 mm and
roughness < 2 µm.
In the interest of product improvement POSEICO Spa reserves the right to change
any data given in this data sheet at any time without previous notice.
If not stated otherwise the maximum value of ratings (simbols over shaded
background) and characteristics is reported.
POSEICO [ POWER SEMICONDUCTORS ]
