ARF676 FAST RECOVERY DIODE
ANSALDO
FINAL SPECIFICATION feb 97 - ISSUE : 03
SWITCHING CHARACTERISTICS
FORWARD RECOVERY VOLTAGE
80
70
60
50
40
30
20
10
0
Tj = 140 °C
IF
VFR
Tj = 25 °C
VF
0
200
400
600
800
1000
1200
di/dt [A/µs]
REVERSE RECOVERY CHARGE
Tj = 140 °C
REVERSE RECOVERY CURRENT
Tj = 140 °C
2500
2000
1500
1000
500
1000
800
600
400
200
0
1000 A
1000 A
500 A
250 A
500 A
250 A
0
0
100
200
300
400
0
100
200
300
400
di/dt [A/µs]
di/dt [A/µs]
IF
d i/d t
ta
ta = Irr / (di/dt)
Softness (s factor) s = tb / ta
Energy dissipation during recovery Er = Vr · (Qrr - Irr ·ta / 2 )
tb = trr - ta
tb
Irr
Vr
POSEICO [ POWER SEMICONDUCTORS ]
