POSEICO
ARF672 FAST RECOVERY DIODE
POSEICO SPA
POwer SEmiconductors Italian COrporation
TARGET SPECIFICATION mar 03 - ISSUE : 2
SURGE CHARACTERISTIC
Tj = 125 °C
FORWARD CHARACTERISTIC
Tj = 125 °C
3000
2500
2000
1500
1000
500
16
14
12
10
8
6
4
2
0
0
0.6
1.6
2.6
3.6
4.6
1
10
100
Forward Voltage [V]
n° cycles
TRANSIENT THERMAL IMPEDANCE
DOUBLE SIDE COOLED
20.0
18.0
16.0
14.0
12.0
10.0
8.0
6.0
4.0
2.0
0.0
0.001
0.01
0.1
1
10
100
t[s]
Distributed by
All the characteristics given in this data sheet are guaranteed only with uniform
clamping force, cleaned and lubricated heatsink, surfaces with flatness < .03 mm and
roughness < 2 µm.
In the interest of product improvement ANSALDO reserves the right to change any
data given in this data sheet at any time without previous notice.
If not stated otherwise the maximum value of ratings (simbols over shaded
background) and characteristics is reported.
POSEICO [ POWER SEMICONDUCTORS ]
