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C30921S 参数 Datasheet PDF下载

C30921S图片预览
型号: C30921S
PDF下载: 下载PDF文件 查看货源
内容描述: 硅雪崩光电二极管 [Silicon Avalanche Photodiodes]
分类和应用: 光电二极管光电二极管
文件页数/大小: 7 页 / 234 K
品牌: PERKINELMER [ PERKINELMER OPTOELECTRONICS ]
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C30902E, C30902S, C30921E, C30921S  
Electrical Characteristics1 at T = 22°C  
A
C30902E, C309021E  
Min Typ Max  
C30902S, C30921S  
Min  
Typ  
Max  
Units  
Breakdown voltage, VBR  
Temperature Coefficient of  
-225  
-
-225  
-
-
V
V
for Constant Gain  
0.5  
-150  
0.7  
0.8  
-250  
0.5  
0.7  
0.8  
V/°C  
R
Gain  
-
Responsivity:  
At  
At  
900  
830  
nm  
nm  
55  
70  
65  
77  
-92  
-117  
108  
128  
- A/W  
- A/W  
Quantum Efficiency:  
At  
At  
900  
830  
nm  
nm  
-60  
-77  
-
-
-60  
-77  
-
-
%
%
-8  
Dark Current, Id  
-
1.5x10-8  
3x10-8  
-1x10  
3x10-8  
A
(Figure 6)  
(Figure 6)  
2
Noise Current, in:  
-13  
f = 10 kHz, f = 1.0 Hz  
-
2.3x10-13 5x10-13  
-1.1x10  
2x10-13  
A/Hz1/2  
(Figure 3)  
(Figure 3)  
Capacitance, Cd  
Rise Time, tr:  
-1.6  
2
-1.6  
2
pF  
R = 50, λ = 830 nm,  
L
10%  
to  
90%  
points  
points  
-0.5  
0.75  
0.75  
-0.5  
0.75  
0.75  
ns  
ns  
Fall Time:  
R = 50, λ = 830 nm,  
L
90%  
to  
10%  
-0.5  
cps  
ns  
-0.5  
Geiger Mode (See Appendix)  
Dark Count Rate at 5% Photon  
Detection Probability 3 (830 nm):  
22°C  
--- 15-,000 30,000  
3-50  
cps  
-
25°C  
-
---  
700  
Voltage Above V  
for 5% Photon  
BR  
Detection Probability 3  
(830 nm) (See Figure 8)  
Dead-Time Per Event  
(See Appendix)  
-
-
-
2
-
V
---  
3-00  
-
After-Pulse Ratio at 5% Photon  
Detection Probability (830 nm)  
22°C 4  
-
-
-
-
2
15  
%
Note 1. At the DC reverse operating voltage V supplied with the device and a light spot diameter of 0.25 mm (C30902E, S) or 0.10 mm (C30921E, S). Note that a specific value  
R
of V is supplied with each device. When the photodiode is operated at this voltage, the device will meet the electrical characteristic limits shown above. The voltage value will be  
R
within the range of 180 to 250 volts.  
2
1/2  
+ P RM) F) B )  
Note 2. The theoretical expression for shot noise current in an avalanche photodiode is i = (2q (I + (I  
M
where q is the electronic charge, I is the dark  
ds  
w
n
ds db  
o
w
surface current, I is the dark bulk current, F is the excess noise factor, M is the gain, P is the optical power on the device, and B , is the noise bandwidth. For these devices F =  
db  
o
0.98 (2-1/M) + 0.02 M. (Reference: PP Webb, RJ McIntyre, JJ Conradi, "RCA Review", Vol. 35 p. 234, (1974)).  
Note 3. The C30902S and C30921S can be operated at a substantially higher Detection Probabilities. See Appendix.  
Note 4. After-Pulse occurring 1 microsecond to 60 seconds after main pulse.