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C30662E 参数 Datasheet PDF下载

C30662E图片预览
型号: C30662E
PDF下载: 下载PDF文件 查看货源
内容描述: 铟镓砷雪崩光电二极管 [InGaAs Avalanche Photodiode]
分类和应用: 光电二极管光电二极管
文件页数/大小: 5 页 / 279 K
品牌: PERKINELMER [ PERKINELMER OPTOELECTRONICS ]
 浏览型号C30662E的Datasheet PDF文件第1页浏览型号C30662E的Datasheet PDF文件第2页浏览型号C30662E的Datasheet PDF文件第3页浏览型号C30662E的Datasheet PDF文件第4页  
InGaAs Avalanche Photodiode C30645E/C30662E Series  
Figure 4. Typical Gain vs (V breakdown - V bias)  
Typical Gain vs (V_Breakdown - V_Bias)  
100  
10  
1
0
2
4
6
8
10  
12  
14  
Vbr-Vop (V)  
Ordering Information  
For more information e-mail us at opto@perkinelmer.com or visit our website at  
www.optoelectronics.perkinelmer.com.  
All values are nominal; specifications subject to change without notice.  
PerkinElmer GmbH & Co. KG  
Wenzel-Jaksch-Str.31  
65199 Wiesbaden  
Phone: +49 611 492 247  
Fax: +49 611 492 170  
PerkinElmer Singapore Pte Ltd.  
47 Ayer Rajah Crescent #06-12  
Singapore 139947  
Phone: +65 6775 2022  
Fax: +65 6775 1008  
PerkinElmer Canada Inc.  
16800 Trans-Canada Highway  
Kirkland, Quebec H9H 5G7  
Canada  
Phone: (514) 693-2200  
Fax : (514) 693-2210  
Optoelectronics  
Headquarters  
44370 Christy Street  
Fremont, CA 94538-  
3180  
Phone: (510) 979-5600  
(800) 775-6786  
Fax: (510) 687-1140  
© 2004 PerkinElmer, Inc. All rights reserved.  
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