L-32XOPT1XX 3.0mm PHOTOTRANSISTOR
ABSOLUTE MAXIMUN RATING:(Ta=25ºC)
PD (mw)
Part No.
V(BR)R (V)
Topr
Tstg
10
5
-35ºC to 85ºC
-35ºC to 85ºC
L-32XOPT1XX
Operating Temperature
Range
Storage Temperature
Range
Power Dissipation
PARAMETER
Reverse Voltage
Lead Soldering Temperature {1.6mm(0.063 inch)From Body}250ºC 5ºC For 3 Seconds
ELECTRO-OPTICAL CHARACTERISTICS:(Ta=25ºC)
BVCEO (V)
MIN TYP MAX
ICEO (nA)
MIN TYP MAX
VCE (s)(V)
tR/tF (uS)
MIN TYP MAX MIN TYP MAX
lC (mA)
MIN TYP MAX
(nm)
MIN TYP MAX
BVECO (V)
MIN TYP MAX
Part No.
5
5
100
100
0.4
0.4
15/15
15/15
0.2 0.6
900 940
900 940
30
30
L-32ROPT1D1
0.6 1.0
L-32AOPT1D1
VCE=5V
IC=1mA
RL=1000
TEST
CONDITION
IE=100uA
Ee=0mW/cm2
IC=2mA
Ee=0.5mW/cm2
IC=100uA
Ee=0mW/cm2
VE=20V
Ee=0mW/cm2
VCE=5V
Ee=0.1mW/cm2
COLLECTOR-
EMITTER
SATURATION
VOLTAGE
COLLECTOR-
EMITTER
BREAKDOWN
VOLTAGE
EMITTER-
COLLECTOR
BREAKDOWN
VOLTAGE
COLLECTOR
DARK
ON STATE
COLLECTOR
CURRENT
SPECTRAL
SENSITIVITY
WAVELENGTH
RISE/FALL
TIME
PARAMETER
CURRENT
D1,D2=BLACK
1.All dimension are in millimeters(inches).
2.Tolerance is 0.25mm(0.01")unless otherwise specified.
B-7