PKQ2510
N-Ch 20V Fast Switching MOSFETs
Electrical Characteristics (TJ=25 ℃, unless otherwise noted)
Symbol
BVDSS
Parameter
Conditions
VGS=0V , ID=250uA
Min.
20
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0.5
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Typ.
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Max.
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Unit
V
Drain-Source Breakdown Voltage
BVDSS Temperature Coefficient
△BVDSS/△TJ
Reference to 25℃ , ID=1mA
VGS=4.5V , ID=4A
0.018
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V/℃
37
RDS(ON)
Static Drain-Source On-Resistance2
m
VGS=2.5V , ID=3A
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45
VGS(th)
Gate Threshold Voltage
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1.2
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V
VGS=VDS , ID =250uA
△VGS(th)
VGS(th) Temperature Coefficient
-3.1
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mV/℃
VDS=16V , VGS=0V , TJ=25℃
VDS=16V , VGS=0V , TJ=55℃
1
IDSS
Drain-Source Leakage Current
uA
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5
VGS=±12V , VDS=0V
IGSS
gfs
Gate-Source Leakage Current
Forward Transconductance
Gate Resistance
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±100
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nA
S
VDS=5V , ID=4A
20
Rg
VDS=0V , VGS=0V , f=1MHz
1.5
8.6
1.37
2.3
5.2
34
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Qg
Total Gate Charge (4.5V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
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VDS=15V , VGS=4.5V , ID=4A
nC
ns
Qgs
Qgd
Td(on)
Tr
VDS=10V , VGS=4.5V , RG=3.3
ID=4A
Td(off)
Tf
Turn-Off Delay Time
Fall Time
23
9.2
635
70
Ciss
Coss
Crss
Input Capacitance
VDS=15V , VGS=0V , f=1MHz
pF
Output Capacitance
Reverse Transfer Capacitance
63
Diode Characteristics
Symbol
Parameter
Conditions
VG=VD=0V , Force Current
VGS=0V , IS=1A , TJ=25℃
Min.
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Typ.
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Max.
4.5
18
Unit
A
IS
ISM
VSD
trr
Continuous Source Current1,4
Pulsed Source Current2,4
Diode Forward Voltage2
Reverse Recovery Time
Reverse Recovery Charge
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A
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1.2
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V
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7.5
2.1
nS
nC
IF=4A , dI/dt=100A/µs , TJ=25℃
Qrr
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Note :
1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.
2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%
3.The power dissipation is limited by 150℃ junction temperature
4.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.
2
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