PKN2611
P-Ch 20V Fast Switching MOSFETs
Electrical Characteristics (TJ=25 ℃, unless otherwise noted)
Symbol
BVDSS
Parameter
Conditions
VGS=0V , ID=-250uA
Min.
-20
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-0.4
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Typ.
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Max.
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Unit
V
Drain-Source Breakdown Voltage
BVDSS Temperature Coefficient
△BVDSS/△TJ
Reference to 25℃ , ID=-1mA
VGS=-4.5V , ID=-4.9A
VGS=-2.5V , ID=-3.4A
VGS=-1.8V , ID=-2A
-0.014
40
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V/℃
45
RDS(ON)
Static Drain-Source On-Resistance2
m
50
60
65
85
VGS(th)
Gate Threshold Voltage
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-1.0
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V
VGS=VDS , ID =-250uA
△VGS(th)
VGS(th) Temperature Coefficient
3.95
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mV/℃
VDS=-16V , VGS=0V , TJ=25℃
VDS=-16V , VGS=0V , TJ=55℃
-1
IDSS
Drain-Source Leakage Current
uA
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-5
VGS=±12V , VDS=0V
IGSS
gfs
Gate-Source Leakage Current
Forward Transconductance
Total Gate Charge (-4.5V)
Gate-Source Charge
Gate-Drain Charge
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±100
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nA
S
VDS=-5V , ID=-3A
12.8
10.2
1.89
3.1
Qg
14.3
2.6
VDS=-15V , VGS=-4.5V , ID=-3A
nC
Qgs
Qgd
Td(on)
Tr
4.3
Turn-On Delay Time
Rise Time
5.6
11.2
73
VDD=-10V , VGS=-4.5V ,
40.8
33.6
18
ns
Td(off)
Tf
Turn-Off Delay Time
Fall Time
RG=3.3, ID=-3A
67
36
Ciss
Coss
Crss
Input Capacitance
857
114
108
1200
160
151
VDS=-15V , VGS=0V , f=1MHz
pF
Output Capacitance
Reverse Transfer Capacitance
Diode Characteristics
Symbol
Parameter
Conditions
Min.
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Typ.
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Max.
-4.9
-14
-1
Unit
A
IS
ISM
VSD
trr
Continuous Source Current1,4
Pulsed Source Current2,4
Diode Forward Voltage2
Reverse Recovery Time
Reverse Recovery Charge
VG=VD=0V , Force Current
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A
VGS=0V , IS=-1A , TJ=25℃
IF=-3A , di/dt=100A/µs ,
TJ=25℃
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V
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21.8
6.9
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nS
nC
Qrr
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Note :
1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.
2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%
3.The power dissipation is limited by 150℃ junction temperature
4.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.
2
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