PKN2609
P-Ch 20V Fast Switching MOSFETs
Electrical Characteristics (TJ=25 ℃, unless otherwise noted)
Symbol
BVDSS
Parameter
Conditions
VGS=0V , ID=-250uA
Min.
-20
---
Typ.
---
Max.
---
Unit
V
Drain-Source Breakdown Voltage
BVDSS Temperature Coefficient
△BVDSS/△TJ
Reference to 25℃ , ID=-1mA
VGS=-4.5V , ID=-3A
-0.01
60
---
V/℃
---
75
RDS(ON)
Static Drain-Source On-Resistance2
m
VGS=-2.5V , ID=-2A
---
85
105
-1.2
---
VGS(th)
Gate Threshold Voltage
-0.5
---
-0.7
2.98
---
V
VGS=VDS , ID =-250uA
△VGS(th)
VGS(th) Temperature Coefficient
mV/℃
VDS=-16V , VGS=0V , TJ=25℃
VDS=-16V , VGS=0V , TJ=55℃
---
-1
IDSS
Drain-Source Leakage Current
uA
---
---
-5
V
GS=±12V , VDS=0V
IGSS
gfs
Gate-Source Leakage Current
Forward Transconductance
Total Gate Charge (-4.5V)
Gate-Source Charge
Gate-Drain Charge
---
---
±100
---
nA
S
VDS=-5V , ID=-3A
---
9
Qg
---
9.7
2.05
2.43
4.8
9.6
52
13.6
2.9
VDS=-15V , VGS=-4.5V , ID=-3A
nC
Qgs
Qgd
Td(on)
Tr
---
---
3.4
Turn-On Delay Time
Rise Time
---
9.6
VDD=-10V , VGS=-4.5V , RG=3.3
---
17.3
104
16.8
960
127
113
ns
ID=-3A
Td(off)
Tf
Turn-Off Delay Time
Fall Time
---
---
8.4
686
90.8
80.4
Ciss
Coss
Crss
Input Capacitance
---
VDS=-15V , VGS=0V , f=1MHz
pF
Output Capacitance
Reverse Transfer Capacitance
---
---
Diode Characteristics
Symbol
Parameter
Conditions
VG=VD=0V , Force Current
VGS=0V , IS=-1A , TJ=25℃
Min.
---
Typ.
---
Max.
-3.1
-15.5
-1
Unit
A
IS
ISM
VSD
trr
Continuous Source Current1,4
Pulsed Source Current2,4
Diode Forward Voltage2
Reverse Recovery Time
Reverse Recovery Charge
---
---
A
---
---
V
---
8.4
3.3
---
nS
nC
IF=-3A , dI/dt=100A/µs , TJ=25℃
Qrr
---
---
Note :
1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.
2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%
3.The power dissipation is limited by 150℃ junction temperature
4.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.
2
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