PKN0014
N-Ch 100V Fast Switching MOSFETs
Electrical Characteristics (TJ=25 ℃, unless otherwise noted)
Symbol
BVDSS
Parameter
Conditions
VGS=0V , ID=250uA
Min.
100
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1.0
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Typ.
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Max.
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Unit
V
Drain-Source Breakdown Voltage
BVDSS Temperature Coefficient
△BVDSS/△TJ
Reference to 25℃ , ID=1mA
VGS=10V , ID=2A
0.122
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V/℃
m
m
V
152
158
2.5
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RDS(ON)
Static Drain-Source On-Resistance2
VGS=4.5V , ID=1A
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VGS(th)
Gate Threshold Voltage
1.5
-4.84
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VGS=VDS , ID =250uA
△VGS(th)
VGS(th) Temperature Coefficient
mV/℃
VDS=80V , VGS=0V , TJ=25℃
VDS=80V , VGS=0V , TJ=55℃
10
IDSS
Drain-Source Leakage Current
uA
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100
±100
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VGS=±20V , VDS=0V
IGSS
gfs
Gate-Source Leakage Current
Forward Transconductance
Gate Resistance
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nA
S
VDS=5V , ID=2A
10.2
2.3
25.5
4.2
4.3
17.3
2.8
50
Rg
VDS=0V , VGS=0V , f=1MHz
4.6
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Qg
Total Gate Charge (10V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
VDS=60V , VGS=10V , ID=2A
nC
ns
Qgs
Qgd
Td(on)
Tr
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VDD=50V , VGS=10V , RG=3.3
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ID=1A
Td(off)
Tf
Turn-Off Delay Time
Fall Time
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2.8
1077
46
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Ciss
Coss
Crss
Input Capacitance
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VDS=15V , VGS=0V , f=1MHz
pF
Output Capacitance
Reverse Transfer Capacitance
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32
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Diode Characteristics
Symbol
Parameter
Conditions
VG=VD=0V , Force Current
VGS=0V , IS=1A , TJ=25℃
Min.
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Typ.
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Max.
2
Unit
A
IS
Continuous Source Current1,4
Diode Forward Voltage2
VSD
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1.2
V
Note :
1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.
2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%
3.The power dissipation is limited by 150℃ junction temperature
4.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.
2
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