Version 1.4
BPW 34 FSR
Maximum Ratings (TA = 25 °C)
Parameter
Symbol
Top; Tstg
VR
Values
-40 ... 100
16
Unit
°C
V
Operating and storage temperature range
Reverse voltage
Reverse voltage
(t < 2 min)
VR
32
V
Total Power dissipation
Ptot
150
mW
V
ESD withstand voltage
(acc. to ANSI/ ESDA/ JEDEC JS-001 - HBM)
VESD
2000
Characteristics (TA = 25 °C)
Parameter
Symbol
(typ (min)) IP
Values
50 (≥ 40)
Unit
Photocurrent
µA
(VR = 5 V, λ = 950 nm, Ee=1 mW/cm2)
Wavelength of max. sensitivity
Spectral range of sensitivity
(typ)
(typ)
λS max
950
nm
λ10%
(typ) 780 nm
... 1100
Radiant sensitive area
(typ)
(typ)
A
7.02
mm2
Dimensions of radiant sensitive area
L x W
2.65 x 2.65
mm x
mm
Half angle
(typ)
ϕ
± 60
°
Dark current
(VR = 10 V)
(typ (max)) IR
2 (≤ 30)
nA
Spectral sensitivity of the chip
(λ = 950 nm)
(typ)
(typ)
Sλ typ
0.7
A / W
Quantum yield of the chip
(λ = 950 nm)
η
0.91
Electro
ns
/Photon
Open-circuit voltage
(typ (min)) VO
330 (≥ 275)
mV
µA
(Ee = 0.5 mW/cm2, λ = 950 nm)
Short-circuit current
(typ)
(typ)
(typ)
(typ)
(typ)
ISC
25
0.02
1.3
(Ee = 0.5 mW/cm2, λ = 950 nm)
Rise and fall time
(VR = 5 V, RL = 50 Ω, λ = 850 nm, IP = 800 µA)
tr, tf
VF
µs
Forward voltage
(IF = 100 mA, E = 0)
V
Capacitance
(VR = 0 V, f = 1 MHz, E = 0)
C0
72
pF
Temperature coefficient of VO
TCV
-2.6
mV / K
2016-06-30
2
OSRAM [ OSRAM GMBH ]
