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BP104S 参数 Datasheet PDF下载

BP104S图片预览
型号: BP104S
PDF下载: 下载PDF文件 查看货源
内容描述: Silizium - PIN- Fotodiode硅PIN光电二极管 [Silizium-PIN-Fotodiode Silicon PIN Photodiode]
分类和应用: 半导体光电二极管光电二极管
文件页数/大小: 5 页 / 99 K
品牌: OSRAM [ OSRAM GMBH ]
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BP 104 S  
Kennwerte (TA = 25 °C, Normlicht A, T = 2856 K)  
Characteristics (TA = 25 °C, standard light A, T = 2856 K) (contd)  
Bezeichnung  
Parameter  
Symbol  
Symbol  
Wert  
Value  
Einheit  
Unit  
Leerlaufspannung, EV = 1000 lx  
VO  
360 (280)  
mV  
Open-circuit voltage  
Kurzschlußstrom, EV = 1000 lx  
Short-circuit current  
ISC  
tr, tf  
50  
20  
µA  
Anstiegs- und Abfallzeit des Fotostromes  
Rise and fall time of the photocurrent  
ns  
RL = 50 Ω; VR = 5 V; λ = 850 nm; Ip = 800 µA  
Durchlaßspannung, IF = 100 mA, E = 0  
VF  
1.3  
V
Forward voltage  
Kapazität, VR = 0 V, f = 1 MHz, E = 0  
C0  
48  
pF  
Capacitance  
Temperaturkoeffizient von VO  
Temperature coefficient of VO  
TKV  
TKI  
NEP  
2.6  
0.18  
mV/K  
%/K  
Temperaturkoeffizient von ISC  
Temperature coefficient of ISC  
Rauschäquivalente Strahlungsleistung  
Noise equivalent power  
VR = 10 V, λ = 850 nm  
3.6 × 1014  
W
-----------  
Hz  
Nachweisgrenze, VR = 10 V, λ = 850 nm  
Detection limit  
D*  
6.1 × 1012  
cm × Hz  
--------------------------  
W
2001-02-21  
3