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High Power / High Speed MQW IR-Chip
131254-970
•
Mechanical Specification:
Dimension
-
-
-
Chip size: 365 x 365µm
Thickness: typ. 250µm
P Bonding Pad: 110µm
Electrodes / Metallization
-
-
-
p-side (anode):
n-side (cathode)
Au alloy
Au alloy
p-Electrode
p-Epitaxy
365
250
typ.
active layer
n-Epitaxy
n-Substrate GaAs
365
n-Electrode
•
Electrical and Optical Characteristics (T=25°C):
Parameter
Forward Voltage
Reverse Current
Output Power
(1)
Switching Time
FWHM
Peak Wavelength
NOTE:
(1) Power is measured by OSA on gold plate
Symbol
Vf
Ir
Φe
tr, tf
�½
λp
λp
Condition
If = 20mA
Vr = 5V
If = 20mA
If = 20mA
If = 20mA
If = 20mA
Min.
Typ.
1.25
Max.
1.45
10
Unit
V
µA
mW
ns
nm
nm
2.0
15/20
35
970
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www.osa-opto.com
201206 rev. 1
OSA [ OSA OPTO LIGHT GMBH ]
