INFRA-RED
1.
2.
2.1
2.2
Item No.: 131234
This specification applies to GaAs / GaAs LED Chips with GaAlAs window - layer
Structure
Mesa structure
Electrodes
p-side (anode)
n-side (cathode)
Au alloy
Au alloy
3.
Outlines (dimensions in microns)
p-Electrode
p-GaAlAs
365
120
280
typ.
p-Epitaxy GaAs
n-Epitaxy GaAs
n-Substrate GaAs
365
Wire bond contacts can also have a spider shape
4.
Electrical and optical characteristics (T=25°C)
n-Electrode
Parameter
Forward voltage
Reverse current
Symbol
V
F
I
R
Conditions
min
typ
max
Unit
V
A
mW
ns
nm
I
F
= 20 mA
1,20
1,40
I
R
= 5 V
10
I
F
= 20 mA
2,0
2,4
output Power *
Φ
e
I
F
= 50 mA
5,0
6,0
Switching time
t
r
, t
f
I
F
= 20 mA
500
Peak wavelength
I
F
= 20 mA
950
λ
P
* On request, wafers will be delivered according to output power classes
Power measurement at OSA on gold plate
5.
Packing
Dice on adhesive film with 1) wire bond side on top
2) back contact on top
6.
Labeling
Type
Lot No.
Φ
e
typ
min
max
Quantity
© 2004
OSA Opto Light GmbH Tel. +49-(0)30-65 76 26 83 Fax +49-(0)30-65 76 26 81 contact@osa-opto.com
OSA [ OSA OPTO LIGHT GMBH ]
