RED
1.
2.
2.1
2.2
Item No.: 101205
This specification applies to GaAsP / GaAs LED Chips
Structure
Planar structure
Electrodes
p-side (anode)
n-side (cathode)
Al
Au alloy
3.
Outlines (dimensions in microns)
p-Electrode
p-Diffusion
Isolator
n-Epitaxy GaAsP
300
120
300
n-Substrate GaAs
300
n-Electrode
4.
Electrical and optical characteristics (T=25°C)
Parameter
Symbol
Conditions
min
typ
max
Unit
V
V
cd
nm
Forward voltage
V
F
I
F
= 20 mA
1,65
1,84
Reverse voltage
V
R
I
R
= 10 A
5
Luminous intensity *
I
V
I
F
= 20 mA
300
600
Peak wavelength
I
F
= 20 mA
660
λ
P
* On request, wafers will be delivered according to luminous intensity classes
Brightness measurement at OSA on gold plate
5.
Packing
Dice on adhesive film with wire bond side on top
6.
Labeling
Type
Lot No.
I
V
typ
min
max
Quantity
© 2004
OSA Opto Light GmbH Tel. +49-(0)30-65 76 26 83 Fax +49-(0)30-65 76 26 81 contact@osa-opto.com
OSA [ OSA OPTO LIGHT GMBH ]
