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Electrical Characteristics (TA=25°C, VDD=16V, unless otherwise specified)
Symbol
Parameter
Test Conditions
Supply Voltage (VDD)
Min
Typ.
Max
Unit
VDD=14.5V, Measure
Leakage current into VDD
VFB=3V
‐
Istartup
IVDD
VDD Start up Current
Operation Current
‐
3
20
uA
‐
2.0
14.8
9.0
‐
mA
V
V
UVLO(ON) VDD Under Voltage Lockout Enter
UVLO(OFF) VDD Under Voltage Lockout Exit(Recovery)
14.2
8.5
16.0
9.5
‐
CS=0V, FB=3V Ramp up VDD
until gate clock is off
IDD=10mA
OVP(ON)
VDD_CLAMP
Over voltage protection voltage
VDD Zener clamp Voltage
27.0
28.5
30
30.0
V
V
‐
‐
Feedback Input Section(FB pin)
VFB_OPEN
IFB_SHORT
VFB Open Loop Voltage
‐
5.4
5.6
6.0
V
Short FB pin to GND and
measure current
FB pin short circuit current
‐
1.55
‐
mA
VTH_0D
VTH_PL
TD_PL
Zero Duty Cycle FB Threshold Voltage
Power Limiting FB Threshold Voltage
Power Limiting Debounce Time
Input Impedance
‐
‐
‐
‐
‐
‐
‐
‐
0.8
3.7
50
4
‐
‐
‐
‐
V
V
ms
KΩ
ZFB_IN
Current Sense Input(Sense Pin)
TSOFTSTART
TBLANKING
ZSENSE_IN
Soft start time
Leading edge blanking time
Input Impedance
‐
‐
‐
‐
‐
‐
4
300
40
‐
‐
‐
ms
ns
KΩ
From Over Current Occurs
till the Gate drive output
start to turn off
FB=3.3V
TD_OC
Over Current Detection and Control Delay
Internal Current Limiting Threshold Voltage
‐
120
0.8
‐
ns
V
VTH_OC
0.76
0.82
Oscillator
FOSC
ΔFTEMP
ΔF_VDD
DMAX
Normal Oscillation Frequency
Frequency Temperature Stability
Frequency Voltage Stability
Maximum duty cycle
‐
‐
‐
45
‐
‐
70
‐
50
5
5
80
22
55
‐
‐
90
‐
KHz
%
%
%
KHz
FB=3.3V, CS=0V
‐
FBURST
Burst Mode Base Frequency
Power MOSFET Section
B_VDSS
RDS(ON)
MOSFET Drain Source Breakdown Voltage
Static Drain to Source On Resistance
‐
‐
V
Ω
‐
‐
650
5.0
VGS=10V, IDS=1A
5.8
Frequency
Frequency Modulation range /Base
frequency
ΔF_VDD
‐
‐4
‐
4
%
DS‐RS2253‐11 May, 2010
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ORISTER [ ORISTER CORPORATION ]
