Xeon 1 Power Infrared Emitter
LED
OSI3XNE1E1E
VER C.2
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Features
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Outline
Dimension
Highest luminous flux
Super energy efficiency
Very long operating life
Superior ESD protection
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Applications
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Night Vision
Camera
Outdoor./Indoor applications
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Anode
Unit:mm
Tolerance:±0.30mm
Cathode
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Absolute
Maximum Rating
Item
Symbol
I
F
I
FP
V
R
P
D
Topr
Tstg
Tsol
(Ta=25℃)
Value
1000
2000
5
1700
-30 ~ +85
-40~ +100
260
℃
/5sec
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Directivity
Unit
mA
mA
V
mW
0
DC Forward Current
Pulse Forward Current*
Reverse Voltage
Power Dissipation
Operating Temperature
Storage Temperature
Lead Soldering Temperature
*Pulse width Max.10ms
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Electrical
0
℃
℃
-
Duty ratio max 1/10
-Optical Characteristics
Symbol
V
F
I
R
λ
P
P
O
2θ
1/2
(Ta=25℃)
Min.
-
-
-
110
-
■
Forward
Operating Current (DC)
Item
DC Forward Voltage
DC Reverse Current
Peak Wavelength
Radiant Power
50% Power Angle
Condition
I
F
=350mA
V
R
=5V
I
F
=350mA
I
F
=350mA
I
F
=350mA
Typ.
1.5
-
850
-
140
Max.
1.7
10
-
-
-
Unit
V
µA
nm
mW
deg
Forward Current, I
F
(mA)
1200
1000
Rth(J-a)=20℃/W
800
600
400
200
0
0
Rth(J-a)=30℃/W
Rth(J-a)=40℃/W
20
40
60
80
100
Ambient Temperature, T
A
(
)
Note: Advises please attach heat sink to use if
Power Dissipation is more than 0.5W.
LED & Application Technologies